Ultrahigh-Quality Ge-on-Glass with a 3.7% Uniaxial Tensile Strain
Liming Wang,
Guangrui Xia
Abstract:While there have been notable advancements in the quality of epitaxial Ge on Si, the crystal quality of bulk Ge remains much superior, which provides an effective method to study the performance potentials of Ge-based semiconductor devices. This study showcases the development of ultrahigh-quality Ge/poly-Si/SiO 2 on glass with a Ge thickness reduced to ≤100 nm (10 μm width) through wafer bonding, thinning, and polishing processes. The minority lifetimes measured for the Ge thin films range between 200 and 100… Show more
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