Ultrahigh Responsivity of Ternary Sb–Bi–Se Nanowire Photodetectors

Huang, Rong; Zhang, J; Wei, Fan; Shi, Lin; Kong, Tao; Cheng, Guosheng

doi:10.1002/adfm.201304176

Cited by 43 publications

(34 citation statements)

References 37 publications

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“…Acting as a function of EQE, the responsivity ( R ) indicates the efficiency of the PDs responding to incident light signals. R can be expressed as R = EQE × q × λ/( h × c ), in which q is the electronic charge, λ is the incident light wavelength, h is the Planck's constant, and c is the velocity of light . Elevating the EQE level is in favor of improvement of responsivity.…”

Section: Resultsmentioning

confidence: 99%

“…R can be expressed as R = EQE × q × λ/(h × c), in which q is the electronic charge, λ is the incident light wavelength, h is the Planck's constant, and c is the velocity of light. [51,52] Elevating the EQE level is in favor of improvement of responsivity. As shown in Figure 5c, owing to the high EQE level, IPD presents the highest R value (−0.1 V bias) of 0.518 A W −1 in NIR region, which is one of the highest values in the NIR sensitive perovskite-based PDs.…”

Section: Resultsmentioning

confidence: 99%

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Perovskite/Organic Bulk‐Heterojunction Integrated Ultrasensitive Broadband Photodetectors with High Near‐Infrared External Quantum Efficiency over 70%

Chen

et al. 2018

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Ultraviolet-visible-near infrared (UV-Vis-NIR) broadband detection is important for image sensing, communication, and environmental monitoring, yet remains as a challenge in achieving high external quantum efficiency (EQE) in the broad spectrum range. Herein, sensitive broadband integrated photodetectors (PDs) with high EQE levels are reported. The organic bulk-heterojunction (OBHJ) layer, based on a NIR sensitive organic acceptor, is employed to extend the response spectrum of the perovskite PDs. A key strategy of introducing dual electron transport materials respectively for Vis and NIR regions into the active layer of integrated PDs is applied. Further combined with the proper energy level alignment and reasonable distribution of PC BM in the active layer, the extraction and transport of photo induced charges in between perovskite and OBHJ is promoted efficiently. The integrated PD with the optimized structure exhibits an EQE mostly beyond 70% in the Vis-NIR region, which is the highest value among the ever reported solution-processable broadband PDs. The highest responsivity is 0.444 and 0.518 A W in the Vis and NIR region, respectively. The specific detectivity is beyond 10 Jones in the range from 340 to 940 nm, enabling the device to detect weak signals in the UV to NIR broad region.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Perovskite/Organic Bulk‐Heterojunction Integrated Ultrasensitive Broadband Photodetectors with High Near‐Infrared External Quantum Efficiency over 70%

Chen

et al. 2018

Small

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“…Among various inorganic semiconductors, metal chalcogenides, particularly, group V–VI compounds have been widely studied for their opto-electrical [24,25] and thermoelectric properties [26,27] and successfully utilized in thin film transistors, [5,6] solar cells, [7,24,28] thermoelectric devices, [29,30] photodetectors (PDs), [31–33] and phase change memory [34] applications. These films have typically been prepared via sophisticated deposition techniques such as catalyst-assisted chemical vapor deposition, [35] sputtering, [36] thermal evaporation [24,37] and molecular beam epitaxy [38] that require energy-intensive, high vacuum deposition conditions not amenable to high-throughput mass production.…”

Section: Introductionmentioning

confidence: 99%

“…

There have been tremendous efforts to deposit inorganic fi lms with excellent properties using chemical bath deposition, [18][19][20][21] spray pyrolysis, [ 22,23 ] and other solution-based methods.Among various inorganic semiconductors, metal chalcogenides, particularly, group V-VI compounds have been widely studied for their optoelectrical [ 24,25 ] and thermoelectric properties [ 26,27 ] and successfully utilized in thin fi lm transistors, [ 5,6 ] solar cells, [ 7,24,28 ] thermoelectric devices, [ 29,30 ] photodetectors (PDs), [31][32][33] and phase change memory [ 34 ] applications. These fi lms have typically been prepared via sophisticated deposition techniques such as catalyst-assisted chemical vapor deposition, [ 35 ] sputtering, [ 36 ] thermal evaporation, [ 24,37 ] and molecular beam epitaxy [ 38 ] that require energy-intensive, high vacuum deposition conditions not amenable to high-throughput mass production.Although most metal chalcogenides are very diffi cult to dissolve in common solvents, recent developments in solution-based chemistry of chalcogenides have overcome this limitation, and homogeneous, high-quality semicon-

…”

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confidence: 99%

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

Hasan

Arinze

Singh

et al. 2016

Adv Elect Materials

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The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we demonstrate a facile, low-cost and scalable, catalyst-free one-step solution-processed approach to grow one-dimensional Sb2Se3 nanostructures directly on flexible substrates for high-performance NIR photodetectors. Structural characterization and compositional analyses reveal high-quality single-crystalline material with orthorhombic crystal structure and a near-stoichiometric Sb/Se atomic ratio. We measure a direct band gap of 1.12 eV, which is consistent with predictions from theoretical simulations, indicating strong NIR potential. The fabricated metal-semiconductor-metal photodetectors exhibit fast response (on the order of milliseconds) and high performance (responsivity ~ 0.27 A/W) as well as excellent mechanical flexibility and durability. The results demonstrate the potential of molecular-ink-based Sb2Se3 nanostructures for flexible electronic and broadband optoelectronic device applications.

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“…65,[112][113][114][115] V-VI semiconductor nanowire is another type of 1D material, which is widely used in the field of optoelectronics such as PDs. 68,[116][117][118][119][120][121][122] Photoelectric devices prepared based on Bi 2 S 3 NWs, Sb-Bi-Se NWs, Sb 2 Se 3 NWs, and so on, all exhibited excellent characteristics; for example, the high spectrum responsivity of Sb-Bi-Se NWs 116 and the ultra-fast response time of Bi 2 S 3 NWs. 117 Moreover, Sb 2 S 3 NWs exhibit not only a good light response over a wide spectral range, but also excellent properties over a wide temperature range.…”

Section: D Materialsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

131

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Ultrahigh Responsivity of Ternary Sb–Bi–Se Nanowire Photodetectors

Cited by 43 publications

References 37 publications

Perovskite/Organic Bulk‐Heterojunction Integrated Ultrasensitive Broadband Photodetectors with High Near‐Infrared External Quantum Efficiency over 70%

Perovskite/Organic Bulk‐Heterojunction Integrated Ultrasensitive Broadband Photodetectors with High Near‐Infrared External Quantum Efficiency over 70%

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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