Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Abstract

Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics Helicity sensitive terahertz radiation detection by field effect transistors We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization, the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation, the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings, the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state. V C 2015 AIP Publishing LLC. [http://dx.

Terahertz ratchet effects in graphene with a lateral superlattice

“…The ratchet effect is of very general nature: The spatially periodic, noncentrosymmetric systems being driven out of thermal equilibrium are able to transport particles even in the absence of an average macroscopic force [22]. This effect, so far demonstrated for semiconductor quantum wells with lateral noncentrosymmetric superlattice structures [23][24][25][26][27][28][29][30], promises high responsivity, short response times, and even new functionalites, such as all-electric detection of the * sergey.ganichev@physik.uni-regensburg.de radiation polarization state including radiation helicity being so far realized applying photogalvanics [31,32]. Most recently, electronic and plasmonic ratchet effects have been considered theoretically in Refs.…”

Noncentrosymmetric plasmon modes and giant terahertz photocurrent in a two-dimensional plasmonic crystal

“…The strength of the plasmonic near field can be considerably enhanced by exciting the plasmon resonances in the 2D-PlCr. As demonstrated both theoretically [28] and experimentally [29][30][31], the 2D-PlCr with a geometrically asymmetric unit cell can exhibit a giant photogalvanic response at the THz frequencies.…”

High-Speed Room Temperature Terahertz Detectors Based on InP Double Heterojunction Bipolar Transistors

“…This work was financially supported by the ANR project NADIA "Integrated NAnoDetectors for terahertz Applications" (ANR-13-NANO-0008), by the financial support from ERA.NET RUS Plus through the project Terasens n°149, by the Region of 8 …”

“…InP HEMTs were actively investigated in the past and they were demonstrated as THz detectors with extremely good sensitivity. [7][8][9] There exist only a few reports on InP HBT based THz detectors. 4,[10][11][12] In this work, we report on a THz responsivity study of InP double-heterojunction bipolar transistors (DHBTs) and demonstrate that these transistors can be competitive sensitive THz sensors operating in a large radiation frequency range (0.25-3.1 THz) with the modulation bandwidth up to 10 GHz.…”