Ultrahigh-Speed Mid-Infrared Photodetectors With 2-D Electron Gas in a CdTe/PbTe Heterojunction

Zhu, Jiaqi; Xu, Haichao; Ma, Songsong; Wang, Zhenglai; Li, Kai; Ali, Nasir; Zhong, Jie; Zhou, Qi; Zhu, Haiming; Lai, Weien; Wu, Huizhen

doi:10.1109/ted.2020.2989417

Cited by 7 publications

(4 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This property makes it possible to control the band gap of PbTe materials using a size-controlled approach, resulting in superior properties compared to their bulk counterparts . Current research on PbTe semiconductor materials mainly focuses on the synthesis of nanomaterials − and the investigation of heterojunction structures with other materials such as PbTe/SnTe, and PbTe/CdTe. − …”

Section: Introductionmentioning

confidence: 99%

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

Guo,

Zhang,

Zhang

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

The epitaxy of PbTe semiconductor materials on Si substrates can be combined with existing microelectronic technology to produce infrared focal plane arrays. In this work, we used the reactive ion etching(RIE) method to fabricate Si holes. Then, we used the electrochemical epitaxial deposition method to deposit PbTe material on the Si holes to prepare the PbTe/Si heterojunction photodetectors. The detectors have low dark current, and the fastest response speed can reach 0.16 s. We can deposit lead telluride through a simple, template-free electrochemical method. By precisely controlling conditions such as precursor concentration, reaction time, and deposition potential, the morphology of lead telluride can be transformed from pyramidshaped to a nanowire. This facile etching route could also be extended to the preparation of varying morphologies of functional inorganic materials.

show abstract

Section: Introductionmentioning

confidence: 99%

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

Guo,

Zhang,

Zhang

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…The 2DEG is attributed to the interfacial bonding coordination mismatch, which is different from traditional 2DEG systems [ 8 , 9 , 10 , 11 ]. The authors [ 12 , 13 ] showed that such a system was a good candidate for high-speed mid-infrared detectors.…”

Section: Introductionmentioning

confidence: 99%

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

et al. 2023

View full text Add to dashboard Cite

The properties of Pb1−xMnxTe/CdTe multilayer composite grown by molecular beam epitaxy on a GaAs substrate were studied. The study included morphological characterization by X-ray diffraction, scanning electron microscopy, secondary ion mass spectroscopy, as well as electron transport and optical spectroscopy measurements. The main focus of the study was on the sensing properties of photoresistors made of Pb1−xMnxTe/CdTe in the infrared spectral region. It was shown that the presence of Mn in the Pb1−xMnxTe conductive layers shifted the cut-off wavelength toward blue and weakened the spectral sensitivity of the photoresistors. The first effect was due to an increase in the energy gap of Pb1−xMnxTe with an increase in Mn concentration, and the second was due to a pronounced deterioration in the crystal quality of the multilayers owing to the presence of Mn atoms, as shown by the morphological analysis.

show abstract

“…Before the invention of quantum cascade lasers, IV-VI materials were the only choice for manufacturing medium wave infrared laser diodes, which are still of great significance today. It is considered an ideal mid-infrared material and has been widely studied [5][6][7][8][9][10][11][12][13][14][15][16][17]. Under the influence of quantum effect, nano PbTe materials show better properties than bulk materials, which makes the research of PbTe nano materials attract much attention.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Z¹,

Zhang²,

Yan³

et al. 2022

Nanotechnology

View full text Add to dashboard Cite

Lead telluride nanowires deposited by electrochemical atomic layers have broad application prospects in the field of photodetectors. In this work, using the method of electrochemical atomic layer deposition, we obtained different morphologies of lead telluride materials by controlling the deposition parameters, such as deposition time, temperature, and potential, and characterized them using SEM, TEM, XPS, and other techniques. A lead telluride nanowire detector with good performance was prepared. The photoresponsivity of the detector is 102 mA/W, the detectivity is 2.1x108 jones, and the response time and recovery time are 0.52s and 0.54s respectively at 2.7 μm wavelength laser irradiation.

show abstract

Ultrahigh-Speed Mid-Infrared Photodetectors With 2-D Electron Gas in a CdTe/PbTe Heterojunction

Cited by 7 publications

References 28 publications

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

PbTe Nanowires Electrochemically Deposited on Si Substrates as PbTe/Si Heterojunction Infrared Photodetectors

Effect of Manganese Alloying on Infrared Detectors Made of Pb1−xMnxTe/CdTe Multilayer Composite

Electrochemical epitaxial PbTe nanowires photodetector for NIR response

Contact Info

Product

Resources

About