Ultralow contact resistance between semimetal and monolayer semiconductors

Shen, Pin-Chun; Su, Cong; Lin, Yuxuan; Chou, Ang‐Sheng; Cheng, Chuan; Park, Jihoon; Chiu, Ming Hui; Lu, Ang‐Yu; Tang, Hao‐Ling; Tavakoli, Mohammad Mahdi; Pitner, Gregory; Ji, Xiang; Cai, Zhengyang; Mao, Nannan; Wang, Jiangtao; Tung, Vincent; Li, Ju; Bokor, Jeffrey; Zettl, Alex; Wu, Chih‐I; Palacios, Tomás; Li, Lain‐Jong; Kong, Jing

doi:10.1038/s41586-021-03472-9

Cited by 834 publications

(810 citation statements)

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“…Two-dimensional (2D) materials have broad application prospects in the fields of nanoelectronics, optoelectronics, and energy conversion and storage due to their unique physical and chemical properties, such as atomic-scale thickness and ideal bandgap structures [1][2][3][4][5][6][7][8][9][10]. Within them, 2D layered materials have been the most widely studied in recent years owing to the in-plane atoms bonded by strong covalent or ionic bonds and interlayers bonded by weak van der Waals forces, and their smooth surface without chemical dangling bonds, exhibiting excellent electrical, optical and mechanical properties [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

et al. 2021

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Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.

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Section: Introductionmentioning

confidence: 99%

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

et al. 2021

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“…The inset in Fig. 2 d reveals a linear I-V relationship between the channel and the electrodes [ 51 – 56 ]. The linear I – V character is conducive to achieving high responsivity but poor sensitivity of photodetectors due to a high dark current [ 57 ].…”

Section: Resultsmentioning

confidence: 99%

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Zhu

et al. 2021

Nanoscale Res Lett

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Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.

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“…Photodetectors based on metal/2D material contact were the first to be studied [44]. The increased optical responsivity of photodetectors with metal/2D structures can be achieved due to the Schottky barrier in the contact area [87][88][89], [121][122][123]. The Schottky barrier limits the transmission of dark currents [124,125].…”

Section: Metal/2d Materials Structuresmentioning

confidence: 99%

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

et al. 2021

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Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.

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Ultralow contact resistance between semimetal and monolayer semiconductors

Cited by 834 publications

References 50 publications

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

CVD-Grown 2D Nonlayered NiSe as a Broadband Photodetector

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

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