Ultralow-Power (1.59 mW/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach–Zehnder Modulator and 28-nm CMOS Driver

Tanaka, Shinsuke; Simoyama, T.; Aoki, Tsuyoshi; Mori, Toshihiko; Sekiguchi, Satoshi; Jeong, Seok–Hwan; Usuki, Tatsuya; Tao, Yu; Morito, Ken

doi:10.1109/jlt.2018.2799965

Cited by 49 publications

(32 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although the electrical driving signals should be synchronized to the light propagating through the optical MZI waveguide, the modulator can be driven using small inverter-based circuitry. A very efficient modulator with an integrated RC equalizer was reported [50]. This had a VπL-product of 1.9 Vmm and operated at 56 Gbit/s.…”

Section: Modulatorsmentioning

confidence: 99%

Silicon photonics platforms for optical communication systems, outlook on future developments

Tsuda

2020

IEICE Electron. Express

View full text Add to dashboard Cite

This paper reviews recent progress in silicon photonics and compares it with other optical device platforms. The key components for optical communication systems, including arrayed waveguide gratings, optical switches, modulators and optical functional devices fabricated on silicon photonics platforms are explained. The integration of III-V compounds, lithium niobate, polymers, phase change and other functional materials are necessary to strengthen silicon photonics platforms. These are also reviewed, and the feasibilities are discussed. Finally, I express my personal view as to the best research direction for silicon photonics.

show abstract

Section: Modulatorsmentioning

confidence: 99%

Silicon photonics platforms for optical communication systems, outlook on future developments

Tsuda

2020

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

“…This can be achieved by increasing the carrier concentration. With the increase in carrier concentration, the capacitance increases along with the insertion loss [3,4]. In Ref.…”

Section: Introductionmentioning

confidence: 99%

Performance analysis of carrier depletion silicon PIN phase shifter

Gabriel

Sivasubramanian

2020

Journal of Optical Communications

View full text Add to dashboard Cite

In this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

show abstract

“…There is increasing interest in silicon-based photonic integrated circuits (PICs), where a large number of photonic devices can be integrated on the same chip [18,19]. Silicon photonics enables largescale integration of photonic devices with low cost and higher volume production [20,21]. To take full advantage of this fabrication process, the lateral sizes of the optical and photonic devices should be scaled down to nanometers to be comparable with the process' electronic-scale standard.…”

Section: Introductionmentioning

confidence: 99%

Design Investigation of 4 × 4 Nonblocking Hybrid Plasmonic Electrooptic Switch

2019

View full text Add to dashboard Cite

This paper proposes a compact, plasmonic-based 4 × 4 nonblocking switch for optical networks. This device uses six 2 × 2 plasmonic Mach-Zehnder switch (MZS), whose arm waveguide is supported by a JRD1 polymer layer as a high electro-optic coefficient material. The 4 × 4 switch is designed in COMSOL environment for 1550 nm wavelength operation. The performance of the proposed switch outperforms those of conventional (nonplasmonic) counterparts. The designed switch yields a compact structure ( 500 × 70 µ m 2 ) having V π L = 12 V · µ m , 1.5 THz optical bandwidth, 7.7 dB insertion loss, and −26.5 dB crosstalk. The capability of the switch to route 8 × 40 Gbps WDM signal is demonstrated successfully.

show abstract

Ultralow-Power (1.59 mW/Gbps), 56-Gbps PAM4 Operation of Si Photonic Transmitter Integrating Segmented PIN Mach–Zehnder Modulator and 28-nm CMOS Driver

Cited by 49 publications

References 9 publications

Silicon photonics platforms for optical communication systems, outlook on future developments

Silicon photonics platforms for optical communication systems, outlook on future developments

Performance analysis of carrier depletion silicon PIN phase shifter

Design Investigation of 4 × 4 Nonblocking Hybrid Plasmonic Electrooptic Switch

Contact Info

Product

Resources

About