Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Lü, Xing; Liu, Chao; Jiang, Huaxing; Zou, Xinbo; Zhang, Anping; Lau, Kei May

doi:10.7567/apex.9.031001

Cited by 18 publications

(10 citation statements)

References 23 publications

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“…The PFE refers to the emission of electrons via a trap state into a continuum of electron states, which could be associated with the presence of defects. [20][21][22][23] The PFE-governed leakage current density is given by…”

Section: Resultsmentioning

confidence: 99%

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth

Zhou

Lü

Chen

et al. 2019

ECS J. Solid State Sci. Technol.

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We report an investigation of the leakage current in Pt/β-Ga2O3 Schottky contacts on an (2¯01) substrate using a temperature-dependent current–voltage (I-V-T) measurement in a temperature range of 300 K to 425 K. It was revealed that the main process of the reverse leakage current flow is the emission of electrons through trap states located near the metal-semiconductor interface, governed by the Poole-Frenkel emission (PFE). Based on an etch pits analysis, the density of the defects at the surface of the (2¯01) β-Ga2O3 substrates was estimated to be ∼2 × 105 cm−2. The trap states associated with these high-density defects, which could be the main culprit for the reverse leakage current in the Pt/β-Ga2O3 Schottky contacts, were identified at ∼ 0.7 eV below the conduction band.

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Section: Resultsmentioning

confidence: 99%

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth

Zhou

Lü

Chen

et al. 2019

ECS J. Solid State Sci. Technol.

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“…The homoepitaxial method of growing GaN layers on GaN substrates is expected to achieve not only low defect density but also the thin channel layer that is desirable for a high-frequency operation with a short gate length. The AlGaN/GaN epitaxial layers that were grown on GaN substrates have either low reverse leakage currents or a high electron mobility compared to the epitaxial layers that were grown on the lattice-mismatched substrates [10], [11]. Many papers reported on GaN HEMTs fabricated on GaN substrates [12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Oishi

Ito

2021

J Comput Electron

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GaN substrates are promising candidates for GaN high electron mobility transistors (HEMTs) due to their epitaxial layer growth with a low defect density. In this study, technology computer-aided design simulations were executed to design the GaN HEMTs on semi-insulating GaN substrates with thin channel layers. Traps in the GaN substrates played a role in suppressing drain-leakage currents, although degrading transient responses changed the bias from off to on-state for the 0.02-μm thin channel layer. A trade-off relationship between the drain-leakage current and transient response is occurred by changing the trap concentration in the GaN substrates. The AlGaN back-barrier structure has been found to be highly effective in suppressing the drain-leakage current in low-trap-concentration GaN substrates. The trade-off relationship improved by adopting the back-barrier layers, and the maximum drain current decreased. The drain-current reduction compensated by increasing the Al content in the barriers without degrading the trade-off relationship. Therefore, for GaN HEMTs that have low-trap-concentration GaN substrates combined with the back-barrier layer, a high-Al-content barrier have characteristics that are favorable for the trade-off relationship in the case of thin channel layers. Moreover, the traps in GaN substrates were found to affect low-frequency S21, which is important for linearity of the power amplifier, as critically as the transient responses.

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“…[23][24][25][26][27] Recently, a nanostructured anode prepared using an array of mesa strings, has been reported. 28,29) The anode has markedly improved the electrical characteristics of AlGaN=GaN SBD, such as breakdown voltage, leakage current, and turn-on voltage. However, reports on the low Schottky contact resistance in GaN and AlGaN=GaN are rare, despite its importance for high current flow.…”

Section: Introductionmentioning

confidence: 99%

Impact of nanoscale patterning on Schottky contact resistance in AlGaN/GaN Schottky barrier diode

Kim

Park

Yang

2018

Jpn. J. Appl. Phys.

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The improvement of the Schottky contact resistance in an AlGaN/GaN Schottky barrier diode was investigated using dense nanoscale mesa holes. The 100 nm mesa hole array under the Schottky metal added a Schottky contact to the mesa edge with a length of 9.4 µm/µm2. This decreased the contact resistance from 8.23 to 2.55 Ω·mm for a 15 × 100 µm2 AlGaN/GaN Schottky contact. Also, the transfer length of 12.5 µm was reduced to 3.6 µm by using the mesa array. The nanoscale mesa holes increased the Schottky current and enabled a narrow Schottky contact with high current density. The diode with a 2 × 100 µm2 Schottky contact that has mesa holes showed a current of 131 A/mm2 at 3 V, which is 3.1 times higher than that of a conventional structure.

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Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Cited by 18 publications

References 23 publications

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Impact of nanoscale patterning on Schottky contact resistance in AlGaN/GaN Schottky barrier diode

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Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Cited by 18 publications

References 23 publications

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga2O3 Grown by Edge-Defined Film-Fed Growth

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga2O3 Grown by Edge-Defined Film-Fed Growth

A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer

Impact of nanoscale patterning on Schottky contact resistance in AlGaN/GaN Schottky barrier diode

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Product

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Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth

Leakage Current by Poole–Frenkel Emission in Pt Schottky Contacts on () β-Ga₂O₃ Grown by Edge-Defined Film-Fed Growth