Ultralow Water Permeation Barrier Films of Triad a-SiN_x:H/n-SiO_xN_y/h-SiO_x Structure for Organic Light-Emitting Diodes

Abstract

Organic electronic devices such as organic light-emitting diodes (OLEDs), quantum dot LEDs, and organic photovoltaics are promising technologies for future electronics. However, achieving long-term stability of organic-based optoelectronic devices has been regarded as a crucial problem to be solved. In this work, a simple and reproducible fabrication method for ultralow water permeation barrier films having a triple-layered (triad) hydrogenated silicon nitride (a-SiN x :H)/nanosilicon oxynitride (n-SiO x N y )/hybrid silicon oxide (h-SiO x ) multistructure is presented. Two triad (a-SiN x :H/n-SiO x N y /h-SiO x ) n=2 multistructure barrier films are deposited on both sides of a poly­(ethylene terephthalate) substrate using a combination of low-pressure plasma-enhanced chemical vapor deposition and dip coating. The deposited films show a high average transmittance (400–700 nm) of 84% and an ultralow water vapor transmission rate of 2 × 10–6 g/m2/day. In the electroluminescence characteristics of OLEDs encapsulated with two triad barrier films, the operational lifetime (T 50) of OLEDs is 1584 h, which is almost similar to that (1416 h) of OLEDs encapsulated with a glass lid.

Exploitation of Improved Long‐Term Stability and Enhanced Photoconversion Efficiency of Organic Photovoltaics Using Flexible Transparent Conducting Electrode with Dual Functions of Antireflection and Ultrahigh Moisture Barrier

“…An interfacial layer of SiO x N y with 4.35 nm thickness is clearly seen. According to a previous report, [26] the density of the interfacial layer SiO x N y could be controlled as 2.96, 3.32, and 2.8 Â g cm À3 according to X-ray reflectivity (XRR) measurements by varying the annealing time as 5, 10, and 20 h, respectively (Table S2, Supporting Information). The longer the annealing time is, the more water molecules and polymer chains are out-diffused, and consequently a denser O-Si-N network is formed.…”

“…Recently, a facile and reproducible fabrication method for ultralow water permeation barrier films having a triple-layered (triad) hydrogenated amorphous silicon nitride (a-SiN x :H)/nanosilicon oxynitride (n-SiO x N y )/hybrid silicon oxide (h-SiO x ) multistructure was presented. [26] One and two triad (a-SiN x :H/n-SiO x N y /h-SiO x ) n¼1,2 multistructure barrier films were deposited on both sides of poly(ethylene terephthalate) substrates using a combination of low pressure plasma enhanced chemical vapor deposition and dip coating. The deposited one and two triad barrier films show high average transmittance (400-700 nm) of 88.7% and 84% and an ultralow water vapor transmission rate (WVTR) of 1.6 Â 10 À5 and 2 Â 10 À6 Â g m À2 day À1 , respectively.…”

“…Based on this perspective, this triad encapsulation structure of a-SiN x :H (n 1 )> n-SiO x N y (n 2 )>h-SiO x (n 3 ) layers is a good candidate to serve as both a moisture barrier and an ARC layer. [26] Therefore, integrating ultrahigh moisture barrier properties and conductive functions onto a flexible polymer film and reinforcing the ARC effect to increase the light transmittance would provide a promising material that fulfills the role of glass/ITO, enabling high-efficiency future flexible optoelectronic, photoelectrochemical, and photovoltaic devices with long-term stability operating in severely humid environments. This potentially could be realized through the combination of an ultrahigh barrier with an AR function and a transparent conducting electrode (TCE) on a flexible substrate.…”

Gas permeation and microstructure of reduced graphene oxide/polyethyleneimine multilayer films createdviarecast and layer-by-layer deposition processes

“…1 Over years, packaging lms designed to protect these items from reactive gases and water molecules have attracted strong scientic and technological interest. [2][3][4] Many barrier solutions have been successfully developed in the past 20-30 years, including metallized plastic lms, 5 SiO x , 6,7 and composite lms. [2][3][4][5][6][7][8][9][10][11] Most inorganic lms show excellent intrinsic barrier behavior, but many of them tend to be compromised by pinholes or defects aer being bent or stretched.…”

Thin film encapsulation for quantum dot light-emitting diodes using a-SiNx:H/SiOxNy/hybrid SiOx barriers

“…28,29 Thus, we previously reported a facile fabrication method for ultrahigh barrier films with a WVTR value of 2 × 10 −6 g per m 2 per day with hydrogenated amorphous silicon nitride (a-SiN x :H)/silicon oxynitride (SiO x N y )/hybrid silicon oxide (h-SiO x ) multilayer barrier films. 30,31 In this study, a triple layered structure of a-SiN x :H/SiO x N y /hybrid SiO x (ASH) on QD-LEDs, as shown in Fig. 1(b), was fabricated as a thin film encapsulation for QD-LEDs using both PECVD and a simple dip-coating method.…”