One-dimensional semiconductor quantum wires are expected to play a key role as functional components and interconnects in future electronic and optical devices. [1][2][3][4] Over the past few years, several research groups have synthesized a variety of nanowires [5][6][7][8][9][10] and managed to assemble them into components for electronic devices. [11][12][13] One of the great challenges in developing nanometer-scale devices is to achieve large areas containing an ultrahigh density of arrays with complex structures built of nanometer-scale elements in a controllable manner. [14][15][16] In addition, feature-size minimization is also a strong motivation due to the limitations of conventional fabrication techniques. The successful alignment and patterning of nanowires would significantly impact many areas in nanometer-scale electronics, optoelectronics, and sensors. The technological advantage of the Langmuir-Blodgett (LB) method has been widely recognized for inducing nanowire alignment on a large scale into two-dimensional (2D) assemblies. [17][18][19][20][21][22] However, all the reported works [17][18][19][20][21][22] required an additional post-deposition secondary treatment for further patterning due to the side-by-side alignment of the nanowires. While previous reports have shown organization of nanowires in nematic or smectic arrangements, [19,23] end-to-end registry, which is very important for unidirectional growth of nanowires and for the fabrication of nanocircuits, has never been demonstrated. However, in the present case, we are able to align the nanowires in areas spanning over two micrometers using the LB technique. Moreover, this process does not require any post-deposition secondary patterning technique for further alignment. The aligned nanowires exhibit remarkable end-to-end registry along with side-by-side registry, practically without any deviation over a two micrometer range while retaining a ∼ 1.3 nm width of the nanowires. The nanowires in the hierarchical array have a very high aspect ratio that exceeds 10 3 with a very tight registry. To the best of our knowledge, this has not previously been reported for any bottomup technique. Moreover, the direct fabrication of complex three-dimensional (3D) patterns is achieved through subsequent layer-by-layer assembly (as shown in Fig. 1