Ultrasensitive broadband photodetectors based on two-dimensional Bi₂O₂Te films

Abstract

Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown...

Chemical Vapor Deposition Growth of Few-Layer β12-Borophane on Copper Foils toward Broadband Photodetection

“…A single response and recovery curve of the photodetector at on and off states with an effective light power of 6.6 mW cm –2 is shown in Figure d, which reveals that the response time (τ res ) and recovery time (τ rec ) of the photodetector are 115 and 121 ms, respectively. The device shows good performance among previously reported 2D-material-based Schottky contacted photodetectors (Table S2), which indicates great potential of borophane for further study and application in nanoelectronics and nanophotonics. ,− …”

Bi2O2Te Nanosheets Saturable Absorber‐Based Passive Mode‐Locked Fiber Laser: From Soliton Molecules to Harmonic Soliton

“…(CVD), [33] oxygenation, [34] and rapid annealing phase transition (RAPT) methods. [35] In 2015, Bi 2 O 2 Te was first synthesized via a solid-state reaction at 873 K by mixing Bi, Bi 2 O 3 , and Te in an evacuated silica tube. [33] The electrical and thermal transport properties were investigated over the temperature range of 300-665 K. It was found that the thermal conductivity of Bi 2 O 2 Te was remarkably low for a crystalline material, with a value of 0.91 W m −1 K −1 at room temperature.…”

“…In 2021, Tian et al reported a broadband and ultrasensitive photodetector based on Bi 2 O 2 Te grown on an n-Si substrate using the low-temperature reactive atom plasma technology. [35] It realized weak light detection within a wavelength range of 210-2400 nm with excellent responsivities of 3 × 10 5 and 2 × 10 4 A•W −1 and detectivities of 4 × 10 15 and 2 × 10 14 Jones for the deep ultraviolet and short-wave infrared spectra, respectively. All previous studies revealed that, compared with Bi 2 O 2 Se, Bi 2 O 2 Te exhibits a narrower band gap (0.23 eV), lower thermal conductivity (0.91 W m −1 K −1 ), higher carrier mobility (3610 cm 2 V −1 s −1 ), broader absorption spectrum, and complementary metal-oxide-semiconductor (CMOS) compatible growth technology; which allows for it to play an important role in microelectronics and optoelectrical devices, in addition to large-scale photonic integrated circuits (PICs).…”

High Mobility and Quantum Oscillations in Semiconducting Bi2O2Te Nanosheets Grown by Chemical Vapor Deposition

“…The aforementioned Bi 2 O 2 Se series’ works have led to increasing research interest in the investigation of the whole 2D Bi 2 O 2 X family, which possesses intriguing non-neutral crystal structures composed of alternatively stacked [Bi 2 O 2 ] n 2 n + layers and [X] n 2 n – layers, small electron effective mass, and tunable band gaps. − Compared to Bi 2 O 2 Se, Bi 2 O 2 Te was predicted to have smaller effective mass, larger spin–orbit coupling, and ferroelectricity under in-plane stress, suggesting the possible rich physics and more excellent electrical properties. , However, few studies of Bi 2 O 2 Te have been done so far, − probably attributed to its lack of efficient ways to achieve the growth of ultrathin Bi 2 O 2 Te films. Recent theoretical work on thermodynamics of growth in Bi 2 O 2 X family clearly pointed out that it is most difficult to synthesize stable Bi 2 O 2 Te because of the existence of various binary phases and the narrow window of chemical potential .…”