For
a long time, chemiresistive gas sensors based on metal oxide
semiconductors (MOSs) suffer from higher operating temperatures, resulting
in higher energy consumption and instability of the sensors. Generally,
a MOS-based chemiresistive gas sensor being able to work at room temperature
is considered to be outstanding already. Here, a highly sensitive
NO2 gas sensor based on the carbon dots-WO3 heterostructure,
which can work below room temperature at –6 °C, is fabricated. At 18, –1, and –6 °C, its detection limits are 200 ppb, 5 ppm,
and 20 ppm, respectively, and the corresponding response values (R
a/R
g) are 1.11,
1.04, and 1.13, respectively. The sensor exhibits good selectivity,
stability, and linearity between relative humidity and response values
too. A peculiar response behavior was observed. Toward oxidizing gas
NO2, the resistance of the sensor based mainly on n-type
WO3 shows decrease behavior. Its peculiar response behavior
and strong gas sensing ability at lower temperatures were elucidated
theoretically using the results of first-principles calculations.
The reduction of NO2 into NO by surface oxygen vacancies
of WO3 and the following adsorption of NO on the surface
of WO3 lead to electron transfer from NO to WO3, and the Fermi level shifts toward the conduction band, making the
sensor exhibit the peculiar response behavior. The stronger adsorption
capability of carbon dots toward NO2 and a synergistic
effect of carbon dots and WO3 together make the sensor
capable of working at lower temperatures and own higher sensitivity.