2017
DOI: 10.1021/acs.nanolett.7b04466
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Ultrasensitive Ethene Detector Based on a Graphene–Copper(I) Hybrid Material

Abstract: Ethene is a highly diffusive and relatively unreactive gas that induces aging responses in plants in concentrations as low as parts per billion. Monitoring concentrations of ethene is critically important for transport and storage of food crops, necessitating the development of a new generation of ultrasensitive detectors. Here we show that by functionalizing graphene with copper complexes biologically relevant concentrations of ethene and of the spoilage marker ethanol can be detected. Importantly, in additio… Show more

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Cited by 24 publications
(42 citation statements)
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“…For example, the transfer characteristics G ( V GS ) of these GFET devices exhibit symmetric shapes and field‐effect hole carrier mobilities of ≈1500 cm 2 V −1 s −1 , which are preserved to ≈80% of their initial values upon the noncovalent surface functionalization with the copper(I) complexes via π–π and/or hydrophobic interactions. The affordable drop in the carrier mobility was ascribed to an increased scattering of the charge carriers . As it was experimentally proven recently, noncovalent functionalization can indeed deliver GFETs with fully preserved mobility .…”
Section: Principle Fabrication and Operation Of Graphene Nanoelectrmentioning
confidence: 81%
See 4 more Smart Citations
“…For example, the transfer characteristics G ( V GS ) of these GFET devices exhibit symmetric shapes and field‐effect hole carrier mobilities of ≈1500 cm 2 V −1 s −1 , which are preserved to ≈80% of their initial values upon the noncovalent surface functionalization with the copper(I) complexes via π–π and/or hydrophobic interactions. The affordable drop in the carrier mobility was ascribed to an increased scattering of the charge carriers . As it was experimentally proven recently, noncovalent functionalization can indeed deliver GFETs with fully preserved mobility .…”
Section: Principle Fabrication and Operation Of Graphene Nanoelectrmentioning
confidence: 81%
“…A back‐gated GFET consists source and drain metallic electrodes bridged by a graphene conduction channel ( Figure a). To ensure a negligible contact resistance, electrodes (e.g., 5 nm Cr/50 nm Au) can be prepared directly on top of the graphene . Double contacts are found to reduce the effective contact resistance.…”
Section: Principle Fabrication and Operation Of Graphene Nanoelectrmentioning
confidence: 99%
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