Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity

Chen, Xuexia; Zang, Jinhao; Shan, Chongxin; Zhang, Yuan; Chen, Yancheng; Zhao, Yue; Dong, Lin; Shan, Chongxin

doi:10.1007/s40843-021-1955-0

Cited by 9 publications

(3 citation statements)

References 67 publications

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“…[13,14] 2D materials are rich in electronic and photoelectronic properties, which makes them have great potential for applications in micro-nanoelectronics and optoelectronics such as optical detection and optical communication. [15][16][17][18] 2D materials are a large material system, but for most of them (graphene, [19] TMDs, [20,21] black-P, [22,23] etc.) the band gap is usually situated in the visible or infrared bands.…”

Section: Introductionmentioning

confidence: 99%

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Long

Liu

Wang

et al. 2023

Adv Funct Materials

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Facing the future development trend of miniaturization and intelligence of electronic devices, solar‐blind photodetectors based on ultrawide‐bandgap 2D semiconductors have the advantages of low dark current, and high signal‐to‐noise ratio, as well as the features of micro‐nanometer miniaturization and multi‐functionalization of 2D material devices, which have potential applications in the photoelectric sensor part of high‐performance machine vision systems. This study reports a 2D oxide semiconductor, AsSbO3, with an ultrawide bandgap (4.997 eV for monolayer and 4.4 eV for multilayer) to be used to fabricate highly selective solar‐blind UV photodetectors, of which the dark current as low as 100 fA and rejection ratio of UV‐C and UV‐A reaches 7.6 × 103. Under 239 nm incident light, the responsivity is 105 mA W−1 and the detectivity is 7.58 × 1012 Jones. Owing to the remarkable anisotropic crystal structure, AsSbO3 also shows significant linear dichroism and nonlinear optical properties. Finally, a simple machine vision system is simulated by combining the real‐time imaging function in solar‐blind UV with a convolutional neural network. This study enriches the material system of ultrawide‐bandgap 2D semiconductors and provides insight into the future development of high‐performance solar‐blind UV optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Long

Liu

Wang

et al. 2023

Adv Funct Materials

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“…A Z-scheme type charge transfer process has been presented in the presence of MoS 2 –NiO–CuO nanohybrid to generate the effective charge separation between the CB of MoS 2 and the VB of NiO and CuO, which may serve as a feasible approach to increase and extend charge life. Due to the proximity of these two types of semiconductors, P–N junctions appeared on the surface of the p-type semiconductor of MoS 2 and NiO on the n-type semiconductor 73 . To understand the electron transfer mechanisms of the produced materials, it is necessary to evaluate the reduction and oxidation capacities of electrons and holes within the MoS 2 –NiO–CuO hybrid.…”

Section: Resultsmentioning

confidence: 99%

Direct Z-scheme heterojunction impregnated MoS2–NiO–CuO nanohybrid for efficient photocatalyst and dye-sensitized solar cell

Dharmalingam,

Bojarajan,

Gopal

et al. 2024

Sci Rep

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In this present work, the preparation of ternary MoS2–NiO–CuO nanohybrid by a facile hydrothermal process for photocatalytic and photovoltaic performance is presented. The prepared nanomaterials were confirmed by physio-chemical characterization. The nanosphere morphology was confirmed by electron microscopy techniques for the MoS2–NiO–CuO nanohybrid. The MoS2–NiO–CuO nanohybrid demonstrated enhanced crystal violet (CV) dye photodegradation which increased from 50 to 95% at 80 min; The degradation of methyl orange (MO) dye increased from 56 to 93% at 100 min under UV–visible light irradiation. The trapping experiment was carried out using different solvents for active species and the Z-Scheme photocatalytic mechanism was discussed in detail. Additionally, a batch series of stability experiments were carried out to determine the photostability of materials, and the results suggest that the MoS2–NiO–CuO nanohybrid is more stable even after four continuous cycles of photocatalytic activity. The MoS2–NiO–CuO nanohybrid delivers photoconversion efficiency (4.92%) explored efficacy is 3.8 times higher than the bare MoS2 (1.27%). The overall results indicated that the MoS2–NiO–CuO nanohybrid nanostructure could be a potential candidate to be used to improve photocatalytic performance and DSSC solar cell applications as well.

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“…[22] The Au substrates with TiO 2 spacer layers of different thickness values were reported to be able to enhance the PL emission of monolayer MoS 2 on Au due to the Fabry-Perot interference. [23,24] The PL intensity of MoS 2 /TiO 2 /Au with a 41-nm-thick TiO 2 layer was observed to increase by 15 times, which is attributed to the fact that the local field enhancement originating from the metal surface roughness became dominant for thin spacer less than ∼ 10 nm. However, the evolution of excitonic PL change and electron transfer of the MoS 2 /Au heterostructures have been still unclear so far.…”

Section: Introductionmentioning

confidence: 97%

Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure

Liu¹,

Tan²,

Shen³

et al. 2022

Chinese Phys. B

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Different MoS2/Au heterostructures can play important roles in tuning the photoluminescence (PL) and optoelectrical properties of monolayer MoS2. Previous studies on PL of MoS2/Au heterostructures have been mainly limited to the PL enhancement by using different Au nanostructures and PL quenching of monolayer MoS2 on flat Au surfaces. Here, we demonstrated enhanced excitonic PL of monolayer MoS2/Au heterostructures on Si/SiO2 substrates. By transferring the continuous monolayer MoS2 onto a stepped Au structure consisting of 60 nm and 100 nm Au films, MoS2/Au-60 and MoS2/Au-100 heterostructures exhibited enhanced PL emission with a blue-shifted PL peak when compared with MoS2/SiO2. Furthermore, the PL intensity of MoS2/Au-60 was ~2 fold larger than that of MoS2/Au-100. The different enhanced excitonic PL in MoS2/Au heterostructures could be attributed to the different charge transfer effect modified by the stepped Au structure. This work may provide insights into the excitonic PL and charge transfer effect of MoS2 on Au films and yield novel phenomena in MoS2/Au heterostructures for further study in PL tuning and optoelectrical properties.

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Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity

Cited by 9 publications

References 67 publications

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Direct Z-scheme heterojunction impregnated MoS2–NiO–CuO nanohybrid for efficient photocatalyst and dye-sensitized solar cell

Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure

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Ultrasensitive monolayer-MoS2 heterojunction photodetectors realized via an asymmetric Fabry-Perot cavity

Cited by 9 publications

References 67 publications

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3

Direct Z-scheme heterojunction impregnated MoS2–NiO–CuO nanohybrid for efficient photocatalyst and dye-sensitized solar cell

Enhanced photoluminescence of monolayer MoS2 on stepped gold structure

Contact Info

Product

Resources

About

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO₃

Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure