Ultrasensitive Photodetectors Based on Island-Structured CH3NH3PbI3 Thin Films

Zhang, Yin; Du, Juan; Wu, Xiaohan; Zhang, Guoqian; Chu, Yingli; Liu, Dapeng; Zhao, Yixin; Liang, Ziqi; Huang, Jia

doi:10.1021/acsami.5b05221

Cited by 114 publications

(97 citation statements)

References 29 publications

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“…Both these surface morphologies are regularly found in CVD [9] and solution processing methodologies [17]. Film thicknesses estimated by the surface profilometer were found to be …”

Section: Samples Deposited At Different Temperatures Exhibited Very Dmentioning

confidence: 68%

Growth patterns and properties of aerosol-assisted chemical vapor deposition of CH3NH3PbI3 films in a single step

Afzaal

Yates

2017

Surface and Coatings Technology

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“…Both these surface morphologies are regularly found in CVD [9] and solution processing methodologies [17]. Film thicknesses estimated by the surface profilometer were found to be …”

Section: Samples Deposited At Different Temperatures Exhibited Very Dmentioning

confidence: 68%

Growth patterns and properties of aerosol-assisted chemical vapor deposition of CH3NH3PbI3 films in a single step

Afzaal

Yates

2017

Surface and Coatings Technology

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“…OPTs are an attractive category of OFETs, which can be used as photodetectors, light‐induced switches, light‐triggered amplifiers, and image sensors, amongst other applications 15, 16, 17, 18, 19, 20, 21, 22, 23. In most studies on OPTs, it was the organic semiconductor itself, which exhibited photosensitivity.…”

mentioning

confidence: 99%

Photosensitive and Flexible Organic Field‐Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array

et al. 2016

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Flexible organic phototransistors are fabricated using polylactide (PLA), a polar biomaterial, as the dielectric material. The charge trapping effect induced by the polar groups of the PLA layer leads to a photosensitivity close to ≈104. The excellent performance of this new device design is further demonstrated by incorporating the phototransistors into a sensor array to successfully image a star pattern.

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“…[11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity.…”

mentioning

confidence: 99%

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

Ren

Chen

et al. 2017

Adv Elect Materials

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long carrier diffusion lengths, [9,10] and low deep-state defects. [11,12] Owing to their exciting photovoltaic applications, their promising potential in photodetection is drawing growing interest. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Yang and co-workers first fabricated a vertical perovskite photodetector, [13] which demonstrated excellent light detecting capability. Lateral photodetectors are easy to make, and more importantly, their intrinsic gain mechanism can lead to very high photosensitivity. [30] Thereby many efforts have been devoted to developing such lateral devices. For single-layer perovskite devices reported, [14][15][16][17] relatively high detectivity (≈10 12 Jones) and short rise/decay time (dozens of milliseconds) were realized, but this is always associated with low on/ off ratios and poor electrical instabilities (induced by ion migration). To meet such challenge, bilayer devices are designed: perovskite film responsible for light absorption and another material film responsible for carriers transport. Significant enhancement in photoresponsivity has been achieved. [18][19][20][21][22][23][24] However, the reported bilayer devices usually employed high-conductive 2D layer to function as main photocarrier transport channel, and this leads to certain detrimental defects. For example, the graphene/perovskite bilayer devices exhibit very low on/off ratio of smaller than 2, [18][19][20][21] and the transition metal sulfides (WS 2 , MoS 2 )/perovskite bilayer devices have very long rise/decay time of a few seconds. [22,23] Also, it should be noted that graphene and the transition metal sulfides are usually deposited by complex and costly process, such as chemical vapor deposition, mechanical exfoliation, and hence is not suitable for large-area fabrication. Solutionprocessed MoS 2 [24] or organic [25,26] /CH 3 CH 3 PbI 3 photodetectors have been fabricated, but their performances are still limited by low on/off ratios of <500. Here we employed TiO 2 nanocrystal (NC) film to transport photocarrier. The designed TiO 2 NC/perovskite bilayer photodetector exhibits high overall performance with on/off ratio of 4000, photodetectivity of 1.85 × 10 12 Jones, and rise/decay time of 0.49/0.56 s. Figure 1a presents the schematic structure of the TiO 2 NC/ perovskite bilayer photodetector fabricated on a glass substrate. First, the TiO 2 NC film was spin coated on the glass substrate, and then Al electrodes were thermally evaporated on the TiO 2 NC film with help of an interdigital mask, resulting in a channel length of 80 µm and a channel width of 8800 µm. The perovskite film (CH 3 NH 3 PbI 3 ) was then spin coated on the TiO 2 NC film, completing the device fabrication (details Owing to their attractive performance in photovoltaic devices, organolead halide perovskite materials have attracted enormous interest for photodetector applications. However, current perovskite-based photodetectors mainly rely on high-conductive 2D materials such as graphene or transition metal sulfi...

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Ultrasensitive Photodetectors Based on Island-Structured CH₃NH₃PbI₃ Thin Films

Cited by 114 publications

References 29 publications

Growth patterns and properties of aerosol-assisted chemical vapor deposition of CH3NH3PbI3 films in a single step

Growth patterns and properties of aerosol-assisted chemical vapor deposition of CH3NH3PbI3 films in a single step

Photosensitive and Flexible Organic Field‐Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Ultrasensitive Photodetectors Based on Island-Structured CH3NH3PbI3 Thin Films

Cited by 114 publications

References 29 publications

Growth patterns and properties of aerosol-assisted chemical vapor deposition of CH3NH3PbI3 films in a single step

Growth patterns and properties of aerosol-assisted chemical vapor deposition of CH3NH3PbI3 films in a single step

Photosensitive and Flexible Organic Field‐Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array

TiO2 Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors

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Product

Resources

About

Ultrasensitive Photodetectors Based on Island-Structured CH₃NH₃PbI₃ Thin Films

TiO₂ Nanocrystal/Perovskite Bilayer for High‐Performance Photodetectors