Ultrasensitive self-powered UV photodetector based on a novel p-n heterojunction of solution-processable organic semiconductors

Alzahrani, Hanan; Sulaiman, Khaulah; Mahmoud, Alaa Y.; Bahabry, Rabab R.

doi:10.1016/j.synthmet.2021.116830

Cited by 17 publications

(3 citation statements)

References 62 publications

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“…Table and Table S1 show the recent performance data of solution-processed UV photodetectors based on p–n junctions and various photodetectors, comparing them with the PTAA/ZnO PD. Our device showcases exceptional characteristics, including high detectivity, rapid response time, and a superior rectification ratio compared to other UV photodetectors. − Moreover, the unencapsulated devices, stored at a relative humidity of approximately 45%, underwent periodic I – V curve measurements. After 60 days, Figure S12 shows no significant change observed in the electrical characteristics of the measured device.…”

Section: Resultsmentioning

confidence: 98%

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

Ha,

Kang,

Jeong

et al. 2024

ACS Appl. Mater. Interfaces

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We introduce an enhanced performance organic−inorganic hybrid p−n junction photodiode, utilizing poly[bis(4phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 °C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of ∼10 2 in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 × 10 11 Jones, × × cm Hz W 1 ) and exceptional rectification ratio (5.47 × 10 4 at ±1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity.

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Section: Resultsmentioning

confidence: 98%

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

Ha,

Kang,

Jeong

et al. 2024

ACS Appl. Mater. Interfaces

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“…In our case, the minimum dark current of 7.65 × 10 -06 A was seen in the sample TZO-100 and the observed detectivity was around 1.39 × 10 11 Jones. The parameter linear dynamic range (LDR, typically denoted in dB) for the sensor was also calculated using relation [33] The maximum LDR ~ 34 dB was noted in TZO-100 sample. Furthermore, transient photocurrent or speed of response was measured to check the switching action of the device, by chopping the optical signal.…”

Section: Photoresponse Analysismentioning

confidence: 99%

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

2023

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Visible transparent $$\mathrm{Cu}/\mathrm{n}-\mathrm{ZnO}$$ Cu / n - ZnO and $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}O\left(x=0.14\right) \mathrm{TZO},$$ Cu / Zn 1 - x Sn x O x = 0.14 TZO , Schottky junctions were successfully fabricated on ITO-coated glass substrates via direct current magnetron reactive sputtering method. The structural, morphological, optical, and electrical properties were thoroughly investigated. The polycrystalline nature of the samples was confirmed by XRD studies. FESEM images validate the changes in surface morphology after doping and annealing, and AFM analysis confirmed the variation in surface roughness. The electrical analysis reveals the presence of a Schottky barrier in the fabricated devices. In dark condition, three-order rectification ratio was observed. A two-order increase in leakage current was also observed after illuminating 365 nm UV light of power 60 µW/cm2. The figures of merits of sensors, such as responsivity, detectivity, response speed, and linear dynamic range, were thoroughly investigated. The fabricated sensor had a responsivity of about 07.80 mA/W and a detectivity of 1.39 × 1011 Jones. At zero bias, the sensor also demonstrated a transient photocurrent response of approximately 783 ms for rise and 876 ms for fall. Similarly, 33.70 dB of linear dynamic range was observed. These findings suggests that Cu/TZO Schottky diodes could be useful for self-powered, visible transparent UV photosensors in next-generation optoelectronic devices.

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“…The response speed is significantly faster compared with the photoconductive photodetector, of which the decay time is usually in the order of several seconds due to the presence of deep level traps and the adsorption of gas molecules. In addition, because conductive polymers can improve the photogenerated e-h pair separation ability of inorganic semiconductors and have excellent hole transport properties [ 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 ], they are also widely used to construct self-powered UV photodetectors based on p-n heterojunction with inorganic semiconductors [ 54 , 55 , 56 ]. Yang’s group demonstrates a self-powered ultraviolet (UV) photodetector based on p-P3HT/n-ZnO nanowire array heterojunction, which is fabricated by spin-coating with a layer of P3HT on ZnO nanowire arrays [ 57 ].…”

Section: Improving the Performance Of Self-powered Uv Photodetectors ...mentioning

confidence: 99%

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

et al. 2022

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Self-powered ultraviolet (UV) photodetectors have attracted considerable attention in recent years because of their vast applications in the military and civil fields. Among them, self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures are a very attractive research field due to combining the advantages of low-dimensional semiconductor nanostructures (such as large specific surface area, excellent carrier transmission channel, and larger photoconductive gain) with the feature of working independently without an external power source. In this review, a selection of recent developments focused on improving the performance of self-powered UV photodetectors based on p-n heterojunction low-dimensional nanostructures from different aspects are summarized. It is expected that more novel, dexterous, and intelligent photodetectors will be developed as soon as possible on the basis of these works.

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Ultrasensitive self-powered UV photodetector based on a novel p-n heterojunction of solution-processable organic semiconductors

Cited by 17 publications

References 62 publications

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p–n Junction Photodiode with a Fast Responsive and High Rectification Ratio

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

Advances in Self-Powered Ultraviolet Photodetectors Based on P-N Heterojunction Low-Dimensional Nanostructures

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