Ultrashort optical pulse characterization using WS_2 monolayers

Janisch, Corey; Mehta, Nikhil; Ma, Ding; Elías, Ana Laura; Perea-López, Néstor; Terrones, Mauricio; Liu, Zhiwen

doi:10.1364/ol.39.000383

Cited by 34 publications

(22 citation statements)

References 19 publications

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“…TMDs include some metals, various semiconductors, as well as superconductors. Over years of development, studies of TMDs have mainly concentrated on MoS 2 , MoSe 2 , WS 2 , and WSe 2 [7][8][9]. They have a changed characteristic (such as electronic structure, band gap) with their different layer thickness, owing to interlayer interactions and the variations of screening.…”

Section: Introductionmentioning

confidence: 99%

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

Leng

Huo

2018

Applied Sciences

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We report a solid-state passively Q-switched Nd:YVO4 laser adopting rhenium diselenide (ReSe2) as saturable absorber (SA) materials. ReSe2 belongs to a type of transition metal dichalcogenides (TMDs) materials and it has the weak-layered dependent feature beneficial for the preparation of few-layer materials. The few-layer ReSe2 was prepared by ultrasonic exfoliation method. Using a power-dependent transmission experiment, its modulation depth and saturation intensity were measured to be 1.89% and 6.37 MW/cm2. Pumped by diode laser and based on few-layer ReSe2 SA, the Q-switched Nd:YVO4 laser obtained the shortest Q-switched pulse width of 682 ns with the highest repetition rate of 84.16 kHz. The maximum average output power was 125 mW with the slope efficiency of 17.27%. Our experiment, to the best of our knowledge, is the first demonstration that used ReSe2 as SA materials in an all-solid-state laser. The results show that the few-layer ReSe2 owns the nonlinear saturable absorption properties and it has the capacity to act as SA in an all-solid-state laser.

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Section: Introductionmentioning

confidence: 99%

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

Leng

Huo

2018

Applied Sciences

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“…Very recently, monolayer WS 2 showed an extraordinarily large second-order nonlinear susceptibility [17]. And WS 2 monolayers have been used for ultra-short optical pulse characterization via second harmonic generation [18]. While MoS 2 has received increasing attention for ultra-short pulse generation, little attention has been paid to WS 2 nano-sheets and WS 2 -based Q-switched fiber laser has not been reported, to the best of author's knowledge.…”

Section: Introductionmentioning

confidence: 99%

All-fiber Er-doped Q-Switched laser based on Tungsten Disulfide saturable absorber

Kassani¹,

Khazaeinezhad²,

Jeong³

et al. 2015

Opt. Mater. Express

125

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We demonstrated a Q-switched fiber laser based on Tungsten Disulfide (WS 2 ) saturable absorber. The WS 2 nano-sheets were prepared by liquid phase exfoliation method and the saturable absorber was fabricated by spin-coating of few-layer WS 2 nano-sheets on a side-polished fiber for pulsed operation of a fiber laser. By inserting the absorber into an Erbiumdoped fiber laser cavity pumped by a 980 nm laser diode, a stable Qswitched laser operation was achieved with a tunable repetition rates from 82 kHz to 134 kHz depending on the applied pump power. The properties of the deposited WS 2 film was examined using scanning electron microscopic (SEM) and atomic force microscope (AFM). Detailed optical properties of the laser output are also discussed.

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“…WS 2 also exhibits strong spin-orbit coupling and band splitting due to spin enabling spintronics/valleytronics, which was first demonstrated in MoS 2 22 23 24 . WS 2 also has high nonlinear susceptibility, suggesting its use for nonlinear optical devices 25 26 . However, most device research to date has been largely based on mechanically exfoliated layers which does not allow high throughput manufacturing.…”

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confidence: 99%

The growth scale and kinetics of WS2 monolayers under varying H2 concentration

Kang

Godin

Yang

2015

Sci Rep

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The optical and electronic properties of tungsten disulfide monolayers (WS2) have been extensively studied in the last few years, yet growth techniques for WS2 remain behind other transition metal dichalcogenides (TMDCs) such as MoS2. Here we demonstrate chemical vapor deposition (CVD) growth of continuous monolayer WS2 films on mm2 scales and elucidate effects related to hydrogen (H2) gas concentration during growth. WS2 crystals were grown by reduction and sulfurization of WO3 using H2 gas and sulfur evaporated from solid sulfur powder. Several different growth formations (in-plane shapes) were observed depending on the concentration of H2. Characterization using atomic force microscopy (AFM) and scanning electron microscopy (SEM) revealed etching of the SiO2 substrate at low concentrations of H2 and in the presence of an Ar carrier gas. We attribute this to insufficient reduction of WO3 during growth. High H2 concentrations resulted in etching of the grown WS2 crystals after growth. The two dimensional X-ray diffraction (2D XRD) pattern demonstrates that the monolayer WS2 was grown with the (004) plane normal to the substrate, showing that the WS2 conforms to the growth substrate.

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Ultrashort optical pulse characterization using WS_2 monolayers

Cited by 34 publications

References 19 publications

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

Diode-Pumped Solid-State Q-Switched Laser with Rhenium Diselenide as Saturable Absorber

All-fiber Er-doped Q-Switched laser based on Tungsten Disulfide saturable absorber

The growth scale and kinetics of WS2 monolayers under varying H2 concentration

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