Ultrasonic Amplification in CdS

Hutson, A. R.; McFee, J. H.; White, Donald L.

doi:10.1103/physrevlett.7.237

Cited by 436 publications

(96 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We utilized this finding by designing a switchcontrolled optomechanical device producing larger-than-unity scattering coefficients of the radiated sound field, and we foresee that this technique will find many striking applications for sensing and spectroscopy. The fact that acoustic gain can be much higher than realized in the works by White and Hutson [10][11][12] makes the present idea less sensitive to crystal noise for sound amplification at ENZ conditions, resulting in a high signal-to-noise ratio. To embed this concept in future and current systems, one needs to consider possible saturation of gain as a result of nonlinear sound interaction and increased material absorption.…”

mentioning

confidence: 75%

See 1 more Smart Citation

Acoustic gain in piezoelectric semiconductors atɛ-near-zero response

Willatzen

Christensen

2014

Phys. Rev. B

View full text Add to dashboard Cite

mentioning

confidence: 75%

“…Amplification of mechanical waves (sound) was observed by Hutson et al in 1961 in a CdS semiconductor slab [10]. When an acoustic field, upon external irradiation, deforms the PZ material, space charges are generated by the elastic field and cause the electrons to redistribute accordingly.…”

mentioning

confidence: 99%

Acoustic gain in piezoelectric semiconductors atɛ-near-zero response

Willatzen

Christensen

2014

Phys. Rev. B

View full text Add to dashboard Cite

“…In non-graphene systems, the SAW amplification effect was previously studied experimentally starting from the beginning of 1960s [5][6][7] ; and by theory in length of the acoustic contact in Si was 1.52 cm. Ultrasonic amplification was studied by applying a pulsed rf signal, with a frequency of 108 MHz, synchronized with an illumination of n-Si bar with a laser radiation that generated photoelectrons.…”

Section: Resultsmentioning

confidence: 99%

“…Most of the progress in the development of acousto-electronic applications was based on traditional piezo-electric materials such as lead zirconate titanate PZT 5 , LiNiO3 6 coated with a semiconductive film, or using a piezoelectric semiconductor such as CdS 7 . Graphene has never been used for amplification of SAW in piezoelectric materials before.…”

Section: Saw Devicementioning

confidence: 99%

Surface acoustic wave amplification by direct current-voltage supplied to graphene film

Insepov

Емелин

Кононенко

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

Using a high-resolution X-Ray diffraction measurement method, the surface acoustic waves (SAW) propagation in a graphene film on the surface of a Ca 3 TaGa 3 Si 2 O 14 (CTGS) piezoelectric crystal was investigated, where an external current was driven across the graphene film. Here we show for the first time that the application of the DC field leads to a significant enhancement of the SAW magnitude and, as a result, to amplification of the diffraction satellites. Amplification of 33.2 dB/cm for the satellite +1, and of 13.8 dB/cm for the satellite +2, at 471 MHz has been observed where the external DC voltage of +10V was applied. Amplification of SAW occurs above a DC field much smaller than that of a system using bulk semiconductor. Theoretical estimates are in reasonable agreement with our measurements and analysis of experimental data for other materials.

show abstract

“…1,2 The nature of this phenomenon is related to Cherenkov's emission of phonons by moving carriers. 3 A surface acoustic wave (SAW) can be amplified if the carriers move near the crystal surface and the carrier drift velocity is more than the SAW velocity.…”

Section: Introductionmentioning

confidence: 99%

Multilayer-graphene-based amplifier of surface acoustic waves

2015

View full text Add to dashboard Cite

The amplification of surface acoustic waves (SAWs) by a multilayer graphene (MLG)-based amplifier is studied. The conductivity of massless carriers (electrons or holes) in graphene in an external drift electric field is calculated using Boltzmann’s equation. At some carrier drift velocities, the real part of the variable conductivity becomes negative and MLG can be employed in SAW amplifiers. Amplification of Blustein’s and Rayleigh’s SAWs in CdS, a piezoelectric hexagonal crystal of the symmetry group C6v, is considered. The corresponding equations for SAW propagation in the device are derived and can be applied to other substrate crystals of the same symmetry. The results of the paper indicate that MLG can be considered as a perspective material for SAW amplification and related applications.

show abstract

Ultrasonic Amplification in CdS

Cited by 436 publications

References 4 publications

Acoustic gain in piezoelectric semiconductors atɛ-near-zero response

Acoustic gain in piezoelectric semiconductors atɛ-near-zero response

Surface acoustic wave amplification by direct current-voltage supplied to graphene film

Multilayer-graphene-based amplifier of surface acoustic waves

Contact Info

Product

Resources

About