Ultrasonic bonding of In/Au and Al/Al for hermetic sealing of MEMS packaging

Kim, Jongbaeg; Chiao, Mu; Lin, Liwei

doi:10.1109/memsys.2002.984291

Cited by 9 publications

(2 citation statements)

References 5 publications

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“…By utilizing high-precision lithography to process III-V thin films and align III-V devices with wafer-level silicon-on-insulator (SOI) circuits, one can realize a high density of integration at a lower cost. There exists a variety of bonding techniques such as anodic bonding, solder bonding [46], thermocompression bonding [47], ultrasonic bonding [48], eutectic bonding [49], adhesive bonding, direct metal-metal bonding, low-temperature melting-glass bonding [50], and dies-to-wafer (D2W) bonding [51]. Here, we will focus on D2W bonding and adhesive bonding.…”

Section: Heterogeneous Integrationmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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With the growing trend in the information industry, silicon photonics technology has been explored in both academia and industry and utilized for high-bandwidth data transmission. Thanks to the benefits of silicon, such as high refractive index contrast with its oxides, low loss, substantial thermal–optical effect, and compatibility with CMOS, a range of passive and active photonic devices have been demonstrated, including waveguides, modulators, photodetectors, and lasers. The most challenging aspect remains to be the on-chip laser source, whose performance is constrained by the indirect bandgap of silicon. This review paper highlights the advancements made in the field of integrated laser sources on the silicon photonics platform. These on-chip lasers are classified according to their gain media, including V semiconductors, III–V semiconductors, two-dimensional materials, and colloidal quantum dots. The methods of integrating these lasers onto silicon are also detailed in this review.

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Section: Heterogeneous Integrationmentioning

confidence: 99%

On-Chip Lasers for Silicon Photonics

Zhang,

Shankar,

Wang

2024

Photonics

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“…The introduced method additionally enables sealing by an ultrasonic welding process since the access ports can be sealed individually. Ultrasound has previously been employed for hermetic sealing at chip level with small bonded areas using manual setups [18][19][20]. The ultrasound welding is here realized at room temperature by standard wire bonding, where a gold wire stud bump [21] is bonded on top of a metallized access port.…”

Section: Introductionmentioning

confidence: 99%

Hermetic integration of liquids using high-speed stud bump bonding for cavity sealing at the wafer level

Antelius¹,

Fischer²,

Niklaus³

et al. 2012

J. Micromech. Microeng.

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This paper reports a novel room-temperature hermetic liquid sealing process where the access ports of liquid-filled cavities are sealed with wire-bonded stud bumps. This process enables liquids to be integrated at the fabrication stage. Evaluation cavities were manufactured and used to investigate the mechanical and hermetic properties of the seals. Measurements on the successfully sealed structures show a helium leak rate of better than 10 −10 mbarL s −1 , in addition to a zero liquid loss over two months during storage near boiling temperature. The bond strength of the plugs was similar to standard wire bonds on flat surfaces.

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Microwave bonding of silicon dies with thin metal films for MEMS applications

Clendenin

Budraa²,

Mai³

53rd Electronic Components and Technology Conference, 2003. Proceedings.

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A hs tractThe sclective. volumetric heating capabilitics of inicro\\ave bonding arc demonstrated using numerical analysis and verificd using transient infrared imaging teclmiques.Two different silicon-to-silicon die designs were inodcled. Both designs arc Icm x lcin silicon die stacks bonded using a 0.24 pm thin gold film. Bonding in the first dcsign occiirred using a microwave cavity operating at 2.45 GHz. Lcss than 76W of power was applied for I5 seconds to achieve iiielting of tlic gold (with a melting point of 1064°C). Although only 12.6% of tlie inpur power is being absorbcd by the die stack. numerical analysis shows that 98.3% of tlds absorbed energy in the die stack is bcing absorbed by the gold metal layer. Infrared images show that the die stack experiences unifonn heating withn tlie time window predicted by numerical analysis. Using the nuincrical results from the first design. the second design siinulated the heating of a 5pm x 5~u n wide by 0.5pm thin gold pad located at tlie bottom of a 10 pin dccp and 2Opni wide mnicrochannel scaled w i t h a Icm s Icm silicon-to-silicon die stack. The purpose of this design is to determinc the ability of a living ccll tethered to the gold pad to survive tlie microwave bonding process. Although only 10.6% of the input power is bcing absorbed by the dic stack, niimerical analysis shows that 98.5% of this absorbed energy in the die stack is being absorbed by tlie gold bonding layer and gold pad area. Less than a thousandth of a percent of the 98.5% of the encrg?. absorbed was by the gold pad area.

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Ultrasonic bonding of In/Au and Al/Al for hermetic sealing of MEMS packaging

Cited by 9 publications

References 5 publications

On-Chip Lasers for Silicon Photonics

On-Chip Lasers for Silicon Photonics

Hermetic integration of liquids using high-speed stud bump bonding for cavity sealing at the wafer level

Microwave bonding of silicon dies with thin metal films for MEMS applications

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