Ultrasonic Surface-Wave Amplification in Cadmium Sulfide

White, Richard M.; Voltmer, F. W.

doi:10.1063/1.1754472

Cited by 58 publications

(5 citation statements)

References 3 publications

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“…e5 represents a bulk shear wave propagating along xi, with particle displacement along x,, at a frequency ft, determined by the velocity of this bulk shear mode, us,, viz where 2 is the distance between adjacent -fingers of the same electrical polarity in figure 36. 13 That Rayleigh waves generated by structures similar to that shown in figure 1 propagate equally in both directions normal to the comb fingers, led to designs for modified interdigital grids to recover the energy being propagated away from the desired direction. One example [Ill is shown in figure 4.…”

Section: Past and Presentmentioning

confidence: 99%

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Past, Present and Future of Surface Elastic Waves

Klerk

1972

J. Phys. Colloques

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The development and growth in the use of surface elastic waves for signal processing of al1 kinds will be traced. The past was mainly concerned with first order effects in showing feasibility. The present is largely concerned with overcoming second order effects which will determine whether a device remains a laboratory curiosity or becomes a practical device in systems. Predictions for the future of surface waves will be made in the light of present trends

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Section: Past and Presentmentioning

confidence: 99%

“…Let us now examine some of the devices reported in the literature. Delay lines were reported using materials such as LiNbO, 1121, CdS [13], SiO, [2], [17], Bi,,GeO,, [14] and PZT [15]. Of these materials LiNbO, suffered the lowest insertion loss and was thus soon regarded as the most desirable material for surface wave devices.…”

Section: Past and Presentmentioning

confidence: 99%

Past, Present and Future of Surface Elastic Waves

Klerk

1972

J. Phys. Colloques

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“…In order to enable enhanced interaction between fields, AE devices require a piezoelectric material with high electromechanical coupling (K 2 ) and a semiconducting medium with suitable conductivity and high carrier mobility. Over the years, several groups have developed devices in materials that are simultaneously piezoelectric and semiconducting, including CdS [19], GaAs [20,21] and more recently, GaN [22][23][24][25]. Despite respectable results for amplification and non-reciprocity, most piezoelectric semiconductor materials exhibit relatively low electromechanical coupling coefficients, which limits the dynamic range of the devices, and necessitates the use of larger biasing fields.…”

Section: Introductionmentioning

confidence: 99%

Acoustic wave amplification with thin film silicon bonded on lithium niobate

Ghosh¹

2022

J. Micromech. Microeng.

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Signal processing with the use of acoustic waves is an important technology for various functions in RF systems, including matched filtering in congested parts of the frequency spectrum. In order to generate long time delays on chip required for these applications, the acoustoelectric effect offers the ability to counter acoustic propagation losses while also generating inherent non-reciprocity. In this work, we demonstrate an approach to directly bond thin film silicon from 200-mm commercial SOI wafers on X-cut lithium niobate substrates with the use of plasma surface activation. The resulting delay line devices at 410 MHz demonstrate amplification of Rayleigh waves, with a peak non-reciprocal contrast between forward and reverse traveling waves of over 25 dB/mm under continuous DC bias conditions. The demonstrated process can extend the functionality of traditionally passive piezoelectric RF microsystems.

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“…Nonlinear acoustic waves in bulk piezocrystals with free carriers were discussed in a number of theoretical papers [12][13][14][15][16]. The application of a dc voltage to the crystal can result in the current amplification of sound [12,14,17] and in the formation of stationary nonlinear waves [12,14,16]. Analytic results in the theory of nonlinear acoustic waves in bulk piezocrystals with free carriers were mostly obtained in the limit of small amplitudes or for the case of very intense acoustic waves [12,13,16].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear acoustoelectric transport in a two-dimensional electron system

et al. 2000

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We study both theoretically and experimentally the nonlinear interaction between an intense surface acoustic wave and a two-dimensional electron plasma in semiconductor-piezocrystal hybrid structures. The experiments on hybrid systems exhibit strongly nonlinear acousto-electric effects. The plasma turns into moving electron stripes, the acousto-electric current reaches its maximum, and the sound absorption strongly decreases. To describe the nonlinear phenomena, we develop a coupled-amplitude method for a two-dimensional system in the strongly nonlinear regime of interaction. At low electron densities the absorption coefficient decreases with increasing sound intensity, whereas at high electron density the absorption coefficient is not a monotonous function of the sound intensity. High-harmonic generation coefficients as a function of the sound intensity have a nontrivial behavior.Theory and experiment are found to be in a good agreement. *

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Ultrasonic Surface-Wave Amplification in Cadmium Sulfide

Cited by 58 publications

References 3 publications

Past, Present and Future of Surface Elastic Waves

Past, Present and Future of Surface Elastic Waves

Acoustic wave amplification with thin film silicon bonded on lithium niobate

Nonlinear acoustoelectric transport in a two-dimensional electron system

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