Ultrasonic waves in a piezoelectric semiconductor quantum plasma: the gain analysis

Abstract

We examined the amplification of ultrasonic waves in a GaAs solid state plasma. We used a set of quantum fluid equations to investigate the effects of plasma components quantum recoil, exchangecorrelation forces, and quantum pressure of plasma carriers. Characteristic parameters of doped n-GaAs, p-GaAs, and n-p-GaAs semiconductors are used to evaluate the ultrasonic gain applying the dispersion relations and their modifications. It is found that the frequency of ultrasonic waves can be impressed by exchange-correlation potential, and the gain has a sensitivity to variation of density n , 0 ( ) wave frequency w , ( ) and drift velocity. The results reveal the propagation of ultrasonic waves via a GaAs plasma reduces the gain coefficient.