Ultrathin Dielectrics in Silicon Microelectronics

Feldman, L. C.; Gusev, Evgeni; Garfunkel, Eric

doi:10.1007/978-94-011-5008-8_1

Cited by 27 publications

(21 citation statements)

References 297 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…If SiO 2 is not replaced by another material, this would require the gate dielectric thickness to be reduced to less than 1 nm in the coming decade. 1 Such a reduction in gate oxide thickness, however, would impose several severe problems on the current Si/SiO 2 semiconductor technology, including a high level of direct tunneling current, a large degree of dopant (boron) diffusion in the gate oxide, and reliability problems associated with nonuniformity of the very thin film. It has been demonstrated that the direct tunneling current grows exponentially as the thickness of the gate dielectric film decreases.…”

Section: Introductionmentioning

confidence: 99%

Phonons and lattice dielectric properties of zirconia

2002

View full text Add to dashboard Cite

We have performed a first-principles study of the structural and vibrational properties of the three low-pressure (cubic, tetragonal, and especially monoclinic) phases of ZrO2, with special attention to the computation of the zone-center phonon modes and related dielectric properties. The calculations have been carried out within the local-density approximation using ultrasoft pseudopotentials and a plane-wave basis. The fully relaxed structural parameters are found to be in excellent agreement with experimental data and with previous theoretical work. The total-energy calculations correctly reproduce the energetics of the ZrO2 phases, and the calculated zone-center phonon frequencies yield good agreement with the infrared and Raman experimental frequencies in the monoclinic phase. The Born effective charge tensors are computed and, together with the mode eigenvectors, used to decompose the lattice dielectric susceptibility tensor into contributions arising from individual infrared-active phonon modes. This work has been partially motivated by the potential for ZrO2 to replace SiO2 as the gate-dielectric material in modern integrated-circuit technology.

show abstract

Section: Introductionmentioning

confidence: 99%

Phonons and lattice dielectric properties of zirconia

2002

View full text Add to dashboard Cite

show abstract

“…This is especially true because ultrathin gate dielectrics in MOSFETs remain the key element in conventional silicon-based microelectronic devices. Since the very beginning of the microelectronics era, the SiO 2 gate oxide has played a critical role in device performance and scaling [1][2][3][4][5][6]. Whereas the thickness of the SiO 2 gate oxide in the first transistors was a few hundred nanometers, the functionality and performance of stateof-the-art devices currently rely on gate oxides that are just a few atomic layers (;1-2 nm) thick.…”

Section: Introductionmentioning

confidence: 99%

Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

2006

Self Cite

View full text Add to dashboard Cite

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-j dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-j dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed.

show abstract

“…Furthermore, elucidation of these processes would also benefit applications as thermal oxidation is widely used to fabricate oxide films, such as gate dielectrics and insulating layers, in electronic devices, [1,2] in nanostructures, [3] and in applications of ceramics materials [4]. The best-known example is Si oxidation, which produces a high-quality oxide/semiconductor interface and is one of the most important techniques that enable semiconductor technology.…”

mentioning

confidence: 99%

Competing atomic and molecular mechanisms of thermal oxidation—SiC versus Si

Shen

Tuttle

Pantelides

2013

Journal of Applied Physics

View full text Add to dashboard Cite

The oxidation of SiC and Si provide a unique opportunity for studying oxidation mechanisms because the product is the same, SiO 2 . Silicon oxidation follows a linear-parabolic law, with molecular oxygen identified as the oxidant. SiC oxidation obeys the same linearparabolic law but has different rates and activation energies and exhibits much stronger facedependence. Using results from first-principles calculations, we show that atomic and molecular oxygen are the oxidant for Si-and C-face SiC respectively. Comparing SiC with Si, we elucidate how the interface controls the competition between atomic and molecular mechanisms.Oxidation is a ubiquitous process that occurs in most solids including metals, insulators, and semiconductors. The atomic-scale processes that underlie oxidation are of fundamental interest as they control the quality of both the resulting oxide and its interface with the substrate.Furthermore, elucidation of these processes would also benefit applications as thermal oxidation is widely used to fabricate oxide films, such as gate dielectrics and insulating layers, in electronic devices, [1,2] in nanostructures, [3] and in applications of ceramics materials [4]. The best-known example is Si oxidation, which produces a high-quality oxide/semiconductor interface and is one of the most important techniques that enable semiconductor technology. Meanwhile, for materials used at high temperatures, stability against thermal oxidation is a major concern [5].Silicon and SiC provide a unique opportunity for investigating thermal oxidation because they have the same native oxide, SiO 2 . Si oxidation has been extensively studied and the kinetics has been well described by a model proposed by Deal and Grove,[6] where the oxidation time t and the oxide thickness x are related by: t = x 2 /B + x/(B/A).The parabolic rate B is related to the oxidant diffusivity D by:

show abstract

Ultrathin Dielectrics in Silicon Microelectronics

Cited by 27 publications

References 297 publications

Phonons and lattice dielectric properties of zirconia

Phonons and lattice dielectric properties of zirconia

Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges

Competing atomic and molecular mechanisms of thermal oxidation—SiC versus Si

Contact Info

Product

Resources

About