Ultrathin electronic synapse having high temporal/spatial uniformity and an Al2O3/graphene quantum dots/Al2O3 sandwich structure for neuromorphic computing

Abstract

An electronic synapse (e-synapse) based on memristive switching is a promising electronic element that emulates a biological synapse to realize neuromorphic computing. However, the complex resistive switching process it relies on hampers the reproducibility of its performance. Thus, achievement of a reproducible electronic synapse with a high rate of finished products has become a significant challenge in the development of an artificial intelligent circuit. Here, we demonstrate an ultrathin e-synapse having high yield (>95%), minimal performance variation, and extremely low power consumption based on an Al 2 O 3 /graphene quantum dots/Al 2 O 3 sandwich structure that was fabricated using atomic layer deposition. The e-synapse showed both high device-to-device and cycle-to-cycle reproducibility with high stability, endurance, and switching uniformity, because the essential synaptic behaviors could be observed. This implementation of an e-synapse with an Al 2 O 3 /graphene quantum dots/Al 2 O 3 structure should intensify motivation for engineering e-synapses for neuromorphic computing.

Optoelectronic Perovskite Synapses for Neuromorphic Computing

“…In previous reports, artificial synapses have been successfully proposed and implemented in various ways . Artificial synapses exhibit potential for superior applications and have stimulated more and more relevant research.…”

Programmable electronic synapse and nonvolatile resistive switches using MoS2 quantum dots

“…It can be concluded from the frequency response of the PPF index that the maximum remembering efficiency of these e-synaptic devices is obtained when the frequency of the action potential is 0.33 Hz. Also, this experiment reveals the ability of the MoS 2 QD synaptic device to function as a low-band pass filter, because, at lower frequencies, the device gets enough time to relax, and at higher frequencies, the trapped electrons are less responsive to the input pulses 5 .…”

“…MoS 2 QDs have a large number of surface defect densities, primarily because of the sulfur and molybdenum vacancies that arise during the liquid-phase exfoliation process 54 . In addition, quantum dots itself have charge storage capacity similar to a capacitor 5 . These defects levels involve in continuous charge trapping and release with characteristic timescales.…”

“…Department of Physics, Indian Institute of Space-Science and Technology (IIST), Valiyamala, Thiruvananthapuram 695547, Kerala, India. * email: kbjinesh@iist.ac.in Interestingly, a large class of nanomaterials has been investigated to understand their neuromorphic responses, because nanostructures have a large number of surface defects that can be electrically modulated [4][5][6][7] .…”

Comprehensive Evaluation of Neuromorphic Computing

“…As an essential unit in the sensory system, a neural connection is in charge of transmitting data between neurons. Resistive arbitrary get to memory (RRAM) can emulate the synaptic capacities due to its tunable resistive exchanging conduct [13]. Here, a counterfeit neurotransmitter dependent on arrangement handled poly vinyl pyrrolidone (PVPy)-Au nanoparticle (NP) half breed is created, different synaptic capacities including Paired Pulse Facilitation (PPF), Post Tetanic Potentiation (PTP), Short Term Plasticity (STP) i.e.…”