Ultrathin epitaxial Bi film growth on 2D HfTe₂ template

Abstract

Among ultrathin Monoelemental 2D Materials (ME2DMs), bismuthene, the single layer of heavier group-VΑ element bismuth (Bi), has been predicted to have large nontrivial gap. Here, we demonstrate the growth of 3BL thin Bi(111) films by molecular beam epitaxy (MBE) on 2D-HfTe2 template. The electronic band structure of 3BL Bi(111) films was measured by Angle-Resolved Photoemission Spectroscopy (ARPES) showing very good matching with the theoretical DFT calculated band structure of the respective free standings Bi(111) layers. After capping with protective Al2O3 layer, the 3BL thin Bi(111) films on 2D-HfTe2 template were found to be stable under ambient conditions, which is required for practical applications and devices fabrications.

Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis

“…The same is true for bismuthene, and there are just a couple of experimental evidences of its fabrication [83,117]. In the breakthrough work [83], bismuthene was fabricated on SiC(0001) surface.…”

“…In the breakthrough work [83], bismuthene was fabricated on SiC(0001) surface. Moreover, in the very latest work [117], two-dimensional hexagonal bismuth structures were obtained on the surface of 2 ML thick HfTe 2 surface deposited on InAs(111)/Si(111) substrate. Furthermore, the attempts to obtain bismuthene on other surfaces (such as Si (111), graphite, graphene, Au (111), and other noble metals) are constantly being made.…”