Ultrathin Ga₂O₃ Photodetector with Fast Response and Trajectory Tracking Capability Fabricated by Liquid Metal Oxidation

Abstract

Low-dimensional Ga 2 O 3 demonstrates a unique ultraviolet photoresponse and could be used in various electronic and optical systems. However, the low-dimensional Ga 2 O 3 photodetector is faced with the challenges of a complex preparation process and poor device performance. In this work, ultrathin Ga 2 O 3 layers with ∼7 nm thickness are prepared on quartz rods by UV exposure to liquid gallium. Benefiting from low-density oxygen vacancy defects cured by UV exposure, the low-dimensional Ga 2 O 3 photodetector exhibits a high response speed (rise: 64.7 μs; fall: 51.4 μs) and an exceptional linear dynamic range of 120 dB. Furthermore, the photodetector array based on these ultrathin Ga 2 O 3 shows an effective trajectory tracking capability by monitoring UV source motion. This work develops a simple preparation method to construct a low-dimensional UV photodetector array with fast response and useful trajectory tracking capability, exhibiting the significance of ultrathin Ga 2 O 3 in UV optoelectronics.