Ultrathin III-V solar cells with light-trapping structures fabricated in situ using an HVPE reactor

III-V PV Cell Core Capability (Final Technical Report)

“…Rh was measured using an integrating sphere from the front side of the cells. [29] This project also supported research on light trapping in ultra-thin GaAs cells using quasi-random photonic crystals [31][32][33], in conjunction with the Tandems Core (#34911). The research results are described in the final technical report for that project.…”

“…Separately, we investigated the use of in situ etching as a potentially low-cost means of fabricating light-trapping structures on the GaInP back surface of ultrathin (270 nm) inverted GaAs solar cells [29]. Most fabrication techniques used to generate light-trapping structures for III-V photovoltaics are ex situ methods, which increase the number of device processing steps and can be high cost (e.g., photolithography).…”