2019
DOI: 10.1109/ted.2019.2930533
|View full text |Cite
|
Sign up to set email alerts
|

Ultrathin Junctionless Nanowire FET Model, Including 2-D Quantum Confinements

Abstract: In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D electrical and geometrical confinements of carrier charge density within few discrete sub-bands. Combining a parabolic approximation of the Poisson equation, first order perturbation theory for the Schrdinger subband energy eigenvalues, and Fermi-Dirac statistics for the confined carrier density leads to an explicit solution of the … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
7
0
1

Year Published

2020
2020
2023
2023

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 16 publications
(8 citation statements)
references
References 14 publications
0
7
0
1
Order By: Relevance
“…In this paper, the DIBL is observed for the JLDG MOSFET with channel length of more than 10nm. For the JLDG MOSFETs with channel lengths below 10nm, additional secondary effects, such as tunneling, have to be analyzed quantum mechanically [26,27]. Taken together the above results, the DIBL can be expressed as the following (6).…”
Section: Extraction Of Dibl Model For Asymmetric Jldg Mosfetmentioning
confidence: 99%
“…In this paper, the DIBL is observed for the JLDG MOSFET with channel length of more than 10nm. For the JLDG MOSFETs with channel lengths below 10nm, additional secondary effects, such as tunneling, have to be analyzed quantum mechanically [26,27]. Taken together the above results, the DIBL can be expressed as the following (6).…”
Section: Extraction Of Dibl Model For Asymmetric Jldg Mosfetmentioning
confidence: 99%
“…As done in [11], relying on the drift-diffusion transportation mechanism, the total drain current for both depletion and accumulation regions can be obtained by…”
Section: Drain Current Derivation In Cylindrical Jl-nw-fetmentioning
confidence: 99%
“…Next, using (11) and ( 5) and applying the chain rule dE T k,n /dψ s = dE T k,n /d∆V × d∆V /dψ s , we obtain:…”
Section: Drain Current Derivation In Cylindrical Jl-nw-fetmentioning
confidence: 99%
See 2 more Smart Citations