2009
DOI: 10.1049/iet-smt:20080060
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Ultrathin metal layer, ITO film and ITO/Cu/ITO multilayer towards transparent antenna

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Cited by 128 publications
(76 citation statements)
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“…In contrast, the gain of the multilayer antenna is always lower about 2 dB. This is due to both ITO/Ag/ITO ohmic loss (R s = 5.0 Ω/sq) and skin depth effect [7]. Indeed at 2 GHz and at 6 GHz, the skin depth is equal to 11.2 µm and Optical transparency improvement 6.5 µm, respectively.…”
Section: Antenna Gainsmentioning
confidence: 83%
See 2 more Smart Citations
“…In contrast, the gain of the multilayer antenna is always lower about 2 dB. This is due to both ITO/Ag/ITO ohmic loss (R s = 5.0 Ω/sq) and skin depth effect [7]. Indeed at 2 GHz and at 6 GHz, the skin depth is equal to 11.2 µm and Optical transparency improvement 6.5 µm, respectively.…”
Section: Antenna Gainsmentioning
confidence: 83%
“…Another ultrawideband transparent antenna has been elaborated from a homemade 200 nm thick ITO/Ag/ITO multilayer. This sample will stand for the state of the art for usual transparent and conductive layers with a measured sheet resistance of 5.0 Ω/sq [7]. The last antenna, made from a continuous 6 µm/5 nm-thick Ag/Ti bilayer (R s = 0.0026 Ω/sq) is a light reflecting antenna which stands for the reference from a radioelectrical behaviour point of view.…”
Section: Ultra-wideband Antenna Designmentioning
confidence: 99%
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“…The multilayer film patch antenna features a peak gain of −4.23 dBi with an efficiency of 7.76%. In Reference [18], the electrical properties of a multilayer ITO film consisting of ITO/Cu/ITO with a maximum optical transmittance of 61% are investigated to validate the feasibility at the ultrahigh frequency (UHF) band. A transparent monopole antenna is printed on a glass substrate with an ITO/Cu/ITO film, featuring an Rs of 4.7 Ω/sq with an 85-(ITO), 13-(Cu), and 85-nm (ITO) thickness.…”
Section: Multilayermentioning
confidence: 99%
“…A 200 nm-thick Ti film is then sputtered in a RF-diode system (Plassys, MP 450S) fully described in Colombel et al (2009). A RF power density of 3.4 W.cm -2 is used on the target; the argon working pressure is 1.1 Pa, and deposition time is 10 min.…”
Section: Titanium Sputtering and Wet Etching Processmentioning
confidence: 99%