As the research of photonic electronics thrives, the
enhanced efficacy
from an optic unit cell can considerably improve the performance of
an optoelectronic device. In this regard, organic phototransistor
memory with a fast programming/readout and a distinguished memory
ratio produces an advantageous outlook to fulfill the demand for advanced
applications. In this study, a hydrogen-bonded supramolecular electret
is introduced into the phototransistor memory, which comprises porphyrin
dyes, meso-tetra(4-aminophenyl)porphine, meso-tetra(p-hydroxyphenyl)porphine, and meso-tetra(4-carboxyphenyl)porphine
(TCPP), and insulated polymers, poly(4-vinylpyridine) and poly(4-vinylphenol)
(PVPh). To combine the optical absorption of porphyrin dyes, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) is selected as a semiconducting channel.
The porphyrin dyes serve as the ambipolar trapping moiety, while the
insulated polymers form a barrier to stabilize the trapped charges
by forming hydrogen-bonded supramolecules. We find that the hole-trapping
capability of the device is determined by the electrostatic potential
distribution in the supramolecules, whereas the electron-trapping
capability and the surface proton doping originated from hydrogen
bonding and interfacial interactions. Among them, PVPh:TCPP with an
optimal hydrogen bonding pattern in the supramolecular electret produces
the highest memory ratio of 1.12 × 108 over 104 s, which is the highest performance among the reported achievements.
Our results suggest that the hydrogen-bonded supramolecular electret
can enhance the memory performance by fine-tuning their bond strength
and cast light on a potential pathway to future photonic electronics.