Ultrathin oxide-nitride gate dielectric MOSFET's

Parker, C.; Lucovsky, G.; Hauser, John R.

doi:10.1109/55.663529

Cited by 68 publications

(40 citation statements)

References 7 publications

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“…This current consists of carriers tunneling from the substrate to the oxide conduction band by FN mechanism and being trapped at the oxide-nitride interface where the carriers are promoted to the poly-Si contact by Poole-Frenkel ͑PF͒ mechanism. 12,13,17 In our devices, the current can be interpreted in a similar way, even though the FN tunneling is now assisted by the Si-nc. Figure 2͑b͒ reveals that above ϳ20 V ͑emission range͒, the current in MNOS devices can be separated in two different regimes.…”

mentioning

confidence: 57%

“…In this challenge, the addition of a thin silicon nitride ͑Si 3 N 4 ͒ layer in a typical metal nitrideoxide semiconductor ͑MNOS͒ configuration is presented as a promising solution. [12][13][14] The MNOS stack reduces the effective field in the oxide layer, lowering the current flow that, in MOS configurations, is strongly field dependent ͓Fowler-Nordheim ͑FN͔͒. 15 The additional nitride barrier hinders the gate injection without significantly affecting the injection from the substrate, thus enhancing the power efficiency, as will be demonstrated later on.…”

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confidence: 99%

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Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

Perálvarez

Carreras

Barreto

et al. 2008

Applied Physics Letters

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We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to ϳ0.1% by the presence of a silicon nitride control layer. The leakage current reduction induced by this nitride buffer effectively increases the power efficiency two orders of magnitude with regard to similarly processed devices with solely oxide. In addition, the nitride cools down the electrons that reach the polycrystalline silicon gate lowering the formation of defects, which significantly reduces the device degradation. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2939562͔The materials based on silicon nanocrystals ͑Si-ncs͒ are attractive for a wide variety of electronic and optoelectronic applications thanks to their tunable emission in the visible range and their compatibility with mainstream complementary metal oxide semiconductor ͑MOS͒ technology. [1][2][3][4][5][6] In the last years, an increasing number of articles dealing with electroluminescence ͑EL͒ from Si-nc embedded in silicon oxide ͑Si-nc/ SiO 2 ͒ devices has been published. Many of them report emission under direct current ͑dc͒ polarization, 7-9 which usually leads to low emission efficiency and fast degradation. Other authors report emission under alternate current ͑ac͒ polarization, 3,10,11 applying the concept of field-effect luminescence, where the recombination takes place after the sequential injection from the substrate of electrons and holes. The alternate injection can be adjusted to a suitable duty cycle which optimizes not only the current flow but also the polarization stress and the device lifetime. In spite of this, the leakage current is still very high and, also in this case, leads to low power efficiencies. 10 Therefore, the reduction of the leakage current appears to be a key issue for the achievement of an efficient device. In this challenge, the addition of a thin silicon nitride ͑Si 3 N 4 ͒ layer in a typical metal nitrideoxide semiconductor ͑MNOS͒ configuration is presented as a promising solution. [12][13][14] The MNOS stack reduces the effective field in the oxide layer, lowering the current flow that, in MOS configurations, is strongly field dependent ͓Fowler-Nordheim ͑FN͔͒. 15 The additional nitride barrier hinders the gate injection without significantly affecting the injection from the substrate, thus enhancing the power efficiency, as will be demonstrated later on. Thanks to the thinness of the Si 3 N 4 buffer and to its relatively high dielectric constant, the overall thickness increase does not have a remarkable impact on the gate voltage. The device lifetime improves as the nitride matrix cools down the carriers from the oxide, reducing the damage generated at the polycrystalline silicon ͑top contact͒ interface.In the present work, we demonstrate a twofold improvement through the addition of a thin Si 3 N 4 control layer within the MOS stack. First, we show ...

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confidence: 57%

mentioning

confidence: 99%

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

Perálvarez

Carreras

Barreto

et al. 2008

Applied Physics Letters

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“…Previous studies have also shown that a Si 3 N 4 -SRO bilayer structure improves the operation of light-emiting devices, such as a reduced leakage current, a reduced electric ield on the oxide layer, and results an improvement in eiciency and a longer device life [73][74][75][76]. In this chapter, the efect of a SRN ilm on a SRO ilm (SRN/SRO bilayers) on their optical properties is analyzed.…”

Section: Silicon-rich Nitride/silicon-rich Oxide (Srn/sro) Bilayersmentioning

confidence: 97%

“…In previous studies, it has been reported that the combination of Si 3 N 4 /SRO structure improves luminescent emission properties [73,74]. Previous studies have also shown that a Si 3 N 4 -SRO bilayer structure improves the operation of light-emiting devices, such as a reduced leakage current, a reduced electric ield on the oxide layer, and results an improvement in eiciency and a longer device life [73][74][75][76].…”

Section: Silicon-rich Nitride/silicon-rich Oxide (Srn/sro) Bilayersmentioning

confidence: 98%

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Cabañas-Tay¹,

Palacios-Huerta²,

Aceves-Mijares³

et al. 2016

Luminescence - An Outlook on the Phenomena and Their Applications

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Luminescent silicon-rich dielectric materials have been under intensive research due to their potential applications in optoelectronic devices. Silicon-rich nitride (SRN) and silicon-rich oxide (SRO) ilms have been mostly studied because of their high luminescence and compatibility with the silicon-based technology. In this chapter, the luminescent characteristics of SRN and SRO ilms deposited by low-pressure chemical vapor deposition are reviewed and discussed. SRN and SRO ilms, which exhibit the strongest photoluminescence (PL), were chosen to analyze their electrical and electroluminescent (EL) properties, including SRN/SRO bilayers. Light emiting capacitors (LECs) were fabricated with the SRN, SRO, and SRN/SRO ilms as the dielectric layer. SRN-LECs emit broad EL spectra where the maximum emission peak blueshifts when the polarity is changed. On the other hand, SRO-LECs with low silicon content (~39 at.%) exhibit a resistive switching (RS) behavior from a high conduction state to a low conduction state, which produce a long spectrum blueshift (~227 nm) between the EL and PL emission. When the silicon content increases, red emission is observed at both EL and PL spectra. The RS behavior is also observed in all SRN/SRO-LECs enhancing an intense ultraviolet EL. The carrier transport in all LECs is analyzed to understand their EL mechanism.

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“…7 In MISFET transistors with SiN x :H gate, such as those being investigated for Si devices and for III-V compound semiconductor devices, there are two issues of concern that at the present moment limit their performance: the high hydrogen content and the high density of interface states. On silicon devices, some different approaches have been explored to reduce the density of interface states to a level comparable to thermal oxides: stacked dielectric structures a͒ Author to whom correspondence should be addressed; electronic mail: imartil@fis.ucm.es such as oxide-nitride-oxide ͑O-N-O͒ 14 or oxide-nitride ͑O-N͒, 15 as well as nitrided oxide interfaces. 16 For III-V semiconductors, SiN x :H seems to be preferable both to native oxides and to CVD SiO 2 because it allows the elimination of oxygen in the processing of III-V devices, and its interface properties have been substantially improved by different techniques like, for instance, the growing of an intermediate pseudomorphic silicon interface control layer ͑ICL͒.…”

Section: Introductionmentioning

confidence: 99%

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Mártil

Prado

Andrés

et al. 2003

Journal of Applied Physics

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We present in this article a comprehensive study of rapid thermal annealing ͑RTA͒ effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions ͑defined in this article as the nitrogen to silicon ratio, xϭN/Si) were analyzed: from Si-rich (xϭ0.97) to N-rich (xϭ1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (xϭ1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing.

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Ultrathin oxide-nitride gate dielectric MOSFET's

Cited by 68 publications

References 7 publications

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks

Luminescent Devices Based on Silicon-Rich Dielectric Materials

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

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