Ultrathin polymer films for microlithography

Abstract

Unclassified 22a. NAME OF RESPONSIBLE INDIVIDUAL 22b. TELEPHONE (include Area Code) 22c. OFFICE SYMBOL Dr. Kenneth J. Wynne (202) 696-4410 DO FORM 1473,84MAR 83 APR edtion may be used until exhausted. SFUIr" CLASSIFICATION OF THr!

Molecular Conformation and Application of Stereoregular PMMA Langmuir-Blodgett Films

“…1 with surface pressure-area ( -A) isotherms. The -A isotherms are qual-itatively consistent with the previous results [1], [2], [4]. The surface potentials of the sand a-PMMAs increase rapidly from zero even in the region where D 0.…”

Preparation of Poly(N-alkylmethacrylamide) Langmuir−Blodgett Films for the Application to a Novel Dry-Developed Positive Deep UV Resist

“…4,5 Because the LB technique can overcome the weakness of spin-coat films in which molecules are distributed randomly, recently the polymer LB films have been investigated for the application to high-resolution lithographic resists with electron beams or X-ray beams to expose the resist layers deposited on substrates and then with a development process to remove the exposed portions (positive type) or the unexposed portions (negative type) selectively. [6][7][8][9] Previously, we have succeeded in the preparation of fairly uniform polymer LB films using acrylamide polymers having long alkyl chains. 10 Furthermore, we also succeeded in producing the fine patterns by the polymerization of alkylacrylamide monomer LB films 11,12 and the cross-linking reaction in polymer LB films 13 with UV irradiation and electron beams.…”

“…The Langmuir−Blodgett (LB) technique has been approved as an effective way to form a defect-free and molecularly ordered ultrathin film with controlled thickness and orientation. , Because the LB technique can overcome the weakness of spin-coat films in which molecules are distributed randomly, recently the polymer LB films have been investigated for the application to high-resolution lithographic resists with electron beams or X-ray beams to expose the resist layers deposited on substrates and then with a development process to remove the exposed portions (positive type) or the unexposed portions (negative type) selectively. − …”

Characterization of the manufacturability of ultrathin resist

“…If these become the technologies of choice for manufacturing future IC generations, the high optical absorption in organic materials at these wavelengths would necessitate thin layer imaging ͑TLI͒ techniques, with imaging layer thickness of less than 2000 Å. [4][5][6][7] In this article we report results from a study carried out in a production environment to explore the manufacturability of TLI. 3 A number of studies have shown increases in defect density with reduced resist film thickness in the regime of 30-500 nm.…”