2020
DOI: 10.1049/el.2020.1922
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Ultrathin single‐crystalline LiNbO 3 film bulk acoustic resonator for 5G communication

Abstract: This Letter reports a high‐performance film bulk acoustic resonator (FBAR) that can be applied in 5G wireless communication. The FBAR has a back‐etched free‐standing structure using an ultra‐thin single‐crystalline lithium niobate (LiNbO3 ) as the piezoelectric film. The thin LiNbO3 was obtained by the smart cut method and FBARs were fabricated by a standard MEMS process. Owing to the superior bulk‐like properties of the single‐crystal thin film, the fabricated FBARs have a resonant frequency of 5.0 GHz, a qua… Show more

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Cited by 16 publications
(8 citation statements)
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“…erefore, how to design sliced virtual networks according to business needs is an important research trend in the future and is the vitality of the slice concept [18].…”
Section: Network Slicing Technologymentioning
confidence: 99%
“…erefore, how to design sliced virtual networks according to business needs is an important research trend in the future and is the vitality of the slice concept [18].…”
Section: Network Slicing Technologymentioning
confidence: 99%
“…Therefore, there is a new horizon that appears for FBAR in the high-frequency application. Additionally, there are some scholars extensively investigating the capability of the FBAR for several applications such as communication filters [314][315][316][317][318] and chemical detection [257,[319][320][321]. In addition, the researchers are still investigating the FBAR parameters for enhancing the device performance such as the quality factor, coupling coefficient, electromechanical coupling, device geometry, and the figure of merit [261,268,288,[322][323][324][325][326].…”
Section: Film Bulk Acoustic Resonatormentioning
confidence: 99%
“…RF silicon-on-insulator (SOI) wafers with 3D monolithic integration, showing significant reduction in footprint and parasitic for RF front-end modules Table shows the comparison among AlScN-based and other piezoelectric material-based resonators. ,,,, Compared with others, CMOS compatible AlScn-based resonators are capable of achieving a high k eff 2 and FOM.…”
Section: Alscn-based Applicationsmentioning
confidence: 99%