Ultrathin SrTiO₃-based oxide memristor with both drift and diffusive dynamics as versatile synaptic emulators for neuromorphic computing

Abstract

Artificial synapses are electronic devices that simulate important functions of biological synapses, and therefore are the basic components of artificial neural morphological networks for brain-like computing. A most important objective for developing artificial synapses is to simulate the characteristics of biological synapses as much as possible, especially their self-adaptive ability to external stimuli. Here we have successfully developed an artificial synapse with multiple synaptic functions and highly adaptive characteristic based on a simple SrTiO3/Nb:SrTiO3 heterojunction type memristor. Diverse functions of synaptic learning, such as short-term/long-term plasticity, transition from short- to long-term plasticity, learning-forgetting-relearning behaviors, associative learning and dynamic filtering, are all bio-realistically implemented in a single device. The remarkable synaptic performance is attributed to the fascinating inherent dynamics of oxygen vacancy drift and diffusion, which give arise to the coexistence of volatile- and nonvolatile- type resistive switching. This work reports a multi-functional synaptic emulator with advanced computing capability based on a simple heterostructure, showing great application potential for a compact and low-power neuromorphic computing system.

An energy-sensitive interfacial-superconductor photodetector

“…Subsequently, a meandering microstrip was fabricated using a 'top-down' process (figure S2). In contrast to the hard-mask method [26,27], the desired pattern on the photoresist was prepared through a lithography process, and ion beam etching (IBE) of Ar + was used to etch the redundant LAO film [28]. Finally, the target device was obtained through the lift-off process.…”

Giant Electroresistance in Ferroelectric Tunnel Junctions via High-Throughput Designs: Toward High-Performance Neuromorphic Computing

“…It is found that our Ba-R device shows the most remarkable retention properties (5 × 10 5 can also be As reported in recent studies, due to the nonferroelectric nature of the oxide STO, the resistive switching is generally attributed to the modification of the interfacial Schottky barrier due to oxygen vacancy migration under an electric field. 56,57 It is easily deduced that the resistive switching at the Sr-R side arises from the tunneling barrier changes induced by V O migration for its nonferroelectric nature. However, for the Ba-R side devices, both mechanisms may exist.…”