Ultrathin Ta2O5 films produced by large-area pulsed laser deposition

Boughaba, S.; Islam, Muhammad Monirul; McCaffrey, J. P.; Sproule, G. I.; Graham, M. J.

doi:10.1016/s0040-6090(00)00982-2

Cited by 29 publications

(8 citation statements)

References 37 publications

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“…Based on the above model with an equivalent circuit shown as inset of Fig. 4, the imaginary part of the admittance, B, can be given by: (1) where ω is the angular frequency, C SC is the space charge capacitance, and C i and τ are the capacitance and time constant of other charge accumulation components parallel to the space charge layer, i.e., local states. 31) The second term in the right hand side of Eq.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Kim

Uosaki

2013

Journal of Electrochemical Science and Technology

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ABSTRACT:Tantalum anodic oxide film was prepared in citric acid solution of various concentrations and the prepared Ta anodic oxide film was characterized by various electrochemical techniques and X-ray photoelectron spectroscopy (XPS). The prepared Ta anodic oxide film showed typical n-type semiconducting properties and the dielectric properties were strongly dependent on the citric acid concentration. The variation of electrochemical and electronic properties was explained in terms of electrolyte anion incorporation into the anodic oxide film, which was supported by XPS measurements.

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Section: Resultsmentioning

confidence: 99%

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Kim

Uosaki

2013

Journal of Electrochemical Science and Technology

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“…1,2 Also, tantalum oxide ͑Ta 2 O 5 ͒ thin films have been widely studied as a capacitor dielectric material in dynamic random access memory as well as a gate dielectric for nanoscale CMOS devices. 3,4 Due to the importance in applications, various thin film deposition techniques including chemical vapor deposition 5,6 ͑CVD͒ and physical vapor deposition 7 have been employed to deposit Ta-based materials.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

Maeng

Park

Kim³

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The growth mechanisms and film properties of atomic layer deposition ͑ALD͒ Ta-based thin films were investigated from alkylamide precursor ͓Ta͑NMe 2 ͒ 5 , ͑PDMAT͔͒. The reactions of PDMAT with various reactants including water, NH 3 , oxygen, and hydrogen plasma were studied and the resulting film properties were investigated by various analysis techniques. For TaN ALD from NH 3 and H plasma, the films were contaminated by considerable amount of carbon, while the Ta 2 O 5 deposited from water and O plasma were quite pure. Also, nitrogen was incorporated for ALD from PDMAT and H plasma, while no nitrogen incorporation was observed for O-plasma based plasma enhanced-ALD of Ta 2 O 5 except at high deposition temperature over 300°C. The results were comparatively discussed focusing on the differences in growth mechanism depending on reactants.

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“…5.12 rechts) deutet bereits auf einen diffusionsgesteuerten Prozess hin. Für eine nähere Untersuchung wurde die Auslagerung mit [201,202].…”

Section: C) Auslagerung Von Ta 2 O X -Schichtenunclassified

Multilagenzonenplatten für die Mikroskopie mit harter Röntgenstrahlung

Eberl¹

2016

Göttingen Series in X-Ray Physics

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Ultrathin Ta2O5 films produced by large-area pulsed laser deposition

Cited by 29 publications

References 37 publications

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants

Multilagenzonenplatten für die Mikroskopie mit harter Röntgenstrahlung

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