Ultraviolet-assisted pulsed laser deposition of La0.7Ca0.3MnO3 thin films with improved oxygen content, crystallinity and magnetoresistive properties

In this letter, we report on the low temperature (∼350°C) growth of Hf–Al–O dielectric films with improved thermal stability and electrical characteristics for gate dielectric applications. A higher capacitance and improved interfacial properties were observed in the films deposited with NH3 ambient followed by ultraviolet radiation assisted oxidation annealing. The films containing 10.6at.% Al were found to remain amorphous after a 900°C furnace anneal for 1min in flowing nitrogen. The flat-band voltage was stabilized by nitrogen incorporation with negligible shift. An equivalent oxide thickness of 19Å and a dielectric constant of 20.4 were obtained in the best samples processed in NH3 and ultraviolet radiation ambient.

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Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics

Essary

Ramani

Crăciun

et al. 2006

Applied Physics Letters

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TRANSPORT PROPERTIES OF Ag-DOPED La_0.7Ca_0.3MnO₃ THIN FILMS ON SILICON SUBSTRATE

Jiang

Zhang

Cao

et al. 2010

Int. J. Mod. Phys. B

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Ag -doped La 0.7 Ca 0.3 MnO 3 (LCMO) films were prepared on silicon substrate by RF magnetron sputtering. The dependences of transport properties on annealing temperature were explored. It is shown that the resistivity of the samples decreases and the metal–insulator transition temperature shifts to higher temperature with the increase in annealing temperature. Two metal–insulator transition temperatures are presented in the R – T plots of Ag -doped LCMO films, which can be explained by the Ag 1+ substitution of La 3+ to form La 1-x Ag x MnO 3 compound. Compared with LCMO thin films, Ag -doping can observably improve the TM-I and decrease the resistivity of the samples.

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Enhanced Crystalline and Magnetic Properties of Co-Doped TiO[sub 2] Films Grown by Ultraviolet-Assisted Pulsed Laser Deposition

Yang

Choi

Song

et al. 2004

Electrochem. Solid-State Lett.

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Ultraviolet-assisted pulsed laser deposition of La0.7Ca0.3MnO3 thin films with improved oxygen content, crystallinity and magnetoresistive properties

Abstract: Influence of misfit stress on the magnetoresistive properties of La 0.7 Ca 0.3 MnO 3−δ thin films

Cited by 3 publications

References 18 publications

Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics

Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics

TRANSPORT PROPERTIES OF Ag-DOPED La_0.7Ca_0.3MnO₃ THIN FILMS ON SILICON SUBSTRATE

Enhanced Crystalline and Magnetic Properties of Co-Doped TiO[sub 2] Films Grown by Ultraviolet-Assisted Pulsed Laser Deposition

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Ultraviolet-assisted pulsed laser deposition of La0.7Ca0.3MnO3 thin films with improved oxygen content, crystallinity and magnetoresistive properties

Abstract: Influence of misfit stress on the magnetoresistive properties of La 0.7 Ca 0.3 MnO 3−δ thin films

Cited by 3 publications

References 18 publications

Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics

Improvement in electrical properties and thermal stability of low-temperature-processed Hf–Al–O gate dielectrics

TRANSPORT PROPERTIES OF Ag-DOPED La0.7Ca0.3MnO3 THIN FILMS ON SILICON SUBSTRATE

Enhanced Crystalline and Magnetic Properties of Co-Doped TiO[sub 2] Films Grown by Ultraviolet-Assisted Pulsed Laser Deposition

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Product

Resources

About

TRANSPORT PROPERTIES OF Ag-DOPED La_0.7Ca_0.3MnO₃ THIN FILMS ON SILICON SUBSTRATE