Ultraviolet-B Resonant-Cavity Light-Emitting Diodes with Tunnel Junctions and Dielectric Mirrors
Estrella Torres,
Joachim Ciers,
Michael A. Bergmann
et al.
Abstract:We demonstrate the
first electrically injected AlGaN-based ultraviolet-B
resonant-cavity light-emitting diode (RCLED). The devices feature
dielectric SiO2/HfO2 distributed Bragg reflectors
enabled by tunnel junctions (TJs) for lateral current spreading. A
highly doped n++-AlGaN/n++-GaN/p++-AlGaN TJ and a top n-AlGaN current spreading layer are used as transparent
contacts, resulting in a good current spreading up to an active region
mesa diameter of 120 μm. To access the N-face side of the device,
the substrat… Show more
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