Ultraviolet bandpass Al0.17Ga0.83N∕GaN heterojunction phototransitors with high optical gain and high rejection ratio

Lee, M. L.; Sheu, Jinn-Kong; Shu, Yung-Ru

doi:10.1063/1.2838307

Cited by 29 publications

(19 citation statements)

References 17 publications

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“…A distinction can be drawn between devices with a responsivity that corresponds to less than 100% quantum efficiency 11,12 (0.29 A/W for 365 nm illumination) and those with a responsivity that exceeds this value. 10,13−17 In the latter category of photodetectors, which includes photoconductors, 14 phototransistors, 13,19 and some metal−semiconductor−metal (MSM) photodetectors, 10,20 an internal gain mechanism must exist where each incident photon induces more than one electron in the conduction band. The gain (G) is defined as the ratio of charge carriers to the photon flux:…”

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confidence: 99%

High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers

Satterthwaite¹,

Yalamarthy²,

Scandrette

et al. 2018

ACS Photonics

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An ultraviolet (UV) photodetector employing the twodimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio of 6 × 10 14 . We also observe a high responsivity (7800 A/W) and ultraviolet−visible rejection ratio (10 6 ), among the highest reported values for any GaN photodetector architecture. We argue that the valence band offset in the AlGaN/GaN heterostructure is essential in achieving this high responsivity, allowing for large gains without necessitating the presence of trap states. Our proposed gain mechanism is consistent with measurements of the scaling of gain with device channel width and incident power. The photodetector architecture has a simple two-step fabrication process, compatible with AlGaN/GaN high electron mobility transistor (HEMT) processing. This unique combination of low dark current, high responsivity, and simple fabrication is attractive for a variety of UV sensing applications.

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confidence: 99%

High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers

Satterthwaite¹,

Yalamarthy²,

Scandrette

et al. 2018

ACS Photonics

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“…Although recent advances in GaN-based UV detectors have opened the way for their practical applications, most of them have been made experimentally Lee et al 2008). Only a limited amount of theoretical works have been performed to study dependence of device characteristics on device geometry and doping profile.…”

Section: Introductionmentioning

confidence: 99%

Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

Wang

Chen

et al. 2011

Opt Quant Electron

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The spectral responsivity characteristics have been numerically studied for visible blind GaN/AlGaN p-i-n ultraviolet detector. The effects of the absorption layer and the n-layer thicknesses on the photoresponse have been investigated. It is shown that the absorption layer and n-layer thicknesses have notable impacts on the peak value of photoresponse and the rejection ratio of short-wavelength side, respectively. Finally, the effect of doping concentration of the absorption layer on photoresponse is discussed in detail. It is demonstrated that mobility degradation, Radiative and Auger recombinations are jointly responsible for the decrease of photoresponse with increasing doping concentration of the absorption layer.

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“…III-nitride material has a suitable large bandgap energy, high quantum efficiency and high electron mobility. Many types of AlGaInN-based photodetectors (PDs) have been fabricated and tested [3,4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28]. Schottky barrier PDs have been commercialized by several companies, and the typical responsivities of this type of PD are 0.18, 0.13, and 0.06 A/W at 350, 300, and 254 nm, respectively [3].…”

Section: Introductionmentioning

confidence: 99%

An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

Chiu

Yeh

Wang

et al. 2019

Sensors

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The monolithic integration of an ultraviolet (UV) sensor and warning lamp would reduce the cost, volume, and footprint, in comparison to a hybrid combination of discrete components. We constructed a module comprising a monolithic sensor indicator device based on basic p–i–n (PIN) photodiodes and a transimpedance amplifier. GaN-based light-emitting diodes (LEDs) with an indium-tin oxide (ITO) current-spreading layer and PIN photodiodes without ITO deposition on the light-receiving area, were simultaneously fabricated. The resultant incident photon-to-electron conversion efficiencies of the PIN photodiodes at UV wavelengths were significantly higher than those of the reverse-biased LEDs. The photocurrent signals of the PIN photodiode were then converted to voltage signals to drive an integrated visible LED, which functioned as an indicator. The more the ambient UV-light intensity exceeded a specified level, the brighter the glow of the LED. The responsivities of 0.20 and 0.16 A/W were obtained at 381 and 350 nm, respectively, under a bias voltage of 5 V. We also addressed the epitaxial structural details that can affect the collection efficiency of the photocurrent generated by UV light absorption. The crosstalk between the PIN photodiode and LEDs (of various center-to-center distances) was measured.

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Ultraviolet bandpass Al0.17Ga0.83N∕GaN heterojunction phototransitors with high optical gain and high rejection ratio

Cited by 29 publications

References 17 publications

High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers

High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers

Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes

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