Ultraviolet Cross-Link Gap Fill Materials and Planarization Applications for Patterning Metal Trenches in 32–45 nm Via First Dual Damascene Process

Abstract

In the dual damascene (DD) process using the via-first trench-last approach, a planarizing thermally cured material is used to minimize thickness variation across the vias. The coating planarization is followed by photoresist application and lithography on vias. The major problem with this process is the large thickness bias observed as via pattern pitch and density change across the wafer. The thickness bias between the open field and dense via arrays is not acceptable for advanced lithography and leads to narrow process windows and problems during the subsequent trench etch steps. In this study, UV-cured gap fill materials are proposed as planarizing layers under a photoresist. UV-cured gap fill materials show good planarization, via fill properties (no voids), etch selectivity, minimal outgassing during curing, excellent resistance to solvents and photoresist intermixing when compared with thermally cured films. This novel method using UV curing to reduce thickness bias in gap fill materials is one of the most promising processes ready to be incorporated into the mass production of patterning metal trenches by the 32 -45 nm via-first DD process.

Silicon-Containing Spin-on Underlayer Material for Step and Flash Nanoimprint Lithography

“…In the actual industrial production process, it is required to reduce the time of the underlayer etch process in the presence of CF 4 . The present result of NCI-NIL-U01 indicates its excellent performance that allows the utilization of thinner resist thickness and/or resist with lower etch rates, [20][21][22] proving that NCI-NIL-U01 is a excellent material for a hard mask in an O 2 etch process and as a pattern transfer under layer for nanoimprint resists in a CF 4 etch process.…”

“…The thickness less than 10 nm for the stripping test was considered to be acceptable to avoid mixing with the resist. [18][19][20][21]…”

Development of Inorganic Gas Barrier Material in Solar Cell Devices for Planarization Properties and Sublimate Defect Reduction

“…absorbance of photo acid generator on quartz wafer compared with TPU-IGB-Ref. The components with low molecular weights such as the cross-linker and catalyst having molecular weight of less than 1000 were due to sublimated easily with the solvents in bake process [6]. It was verified that TPU-IGB1 have a great advantage for inducing sublimate reduction compared with TPU-IGB-Ref with the cross-linker and catalyst.…”

“…In the fablication of solar cell devices using gas barrier materials, both spin coating and chemical vapor deposition (CVD) antireflective coating have respective advantages and disadvantages. Spin coating process using a conventional thermal cross-link planar material was reported to decrease the thicknesses bias between the blanket areas and interconnect areas in lithography techniques [3][4][5][6][7][8]. In addition, CVD was used as another coating method.…”

Study of High Etch Rate Bottom Antireflective Coating and Gap Fill Materials Using Dextrin Derivatives in ArF Lithography

“…As one of the solutions, the application of coating a bottom antireflective coating (BARC) between the resist and the substrate has been extensively investigated in order to decrease the reflectivity from the substrate. [1][2][3][4][5] Along with the progress of resist pattern scale miniaturization, thinner resist films are being used. Additionally the need to significantly reduce the time of the BARC etch process has required BARC that show good performance at thinner thickness or that possess higher etch rates in comparison to the resists being used.…”