Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates

Kneissl, Michael; Yang, Zhihong; Teepe, Mark; Knollenberg, Cliff; Johnson, N. M.; Usikov, A.; Dmitriev, V.

doi:10.1143/jjap.45.3905

Cited by 46 publications

(31 citation statements)

References 23 publications

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“…It has been recently shown, that carrying out the metal organic vapour phase epitaxy (MOVPE) in a close coupled shower head reactor leads to unintentional gallium incorporation (Hiroki et al, 2013;Smith et al, 2014;Ben Ammar et al, 2017) and thus the formation of quaternary InAlGaN alloys. These quaternary alloys could exhibit better performances and strain free alloys as one may tune independently the gap and the lattice constant (Kneissl et al, 2006;Dogmus et al, 2016). Therefore, this work is focused on quaternary InAlGaN as its growth is still challenging.…”

Section: Introductionmentioning

confidence: 99%

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Ammar

Minj

Chauvat

et al. 2017

Journal of Microscopy

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SummaryDefects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth conditions, the quality of the GaN template may play an important role in the formation of defects in the barrier. Therefore, this work is focused on effects caused by threading dislocations (TDs) and inversion domains (IDs) originating from the underlying GaN. The effects are observed on the crystalline quality of the barrier and characteristic surface morphologies. Each type of TDs is shown to affect the surface morphology in a different way. Depending on the size of the corresponding hillock for a given pinhole, it was possible to determine the dislocation type. It is pointed out that the smallest pinholes are not connected to TDs whereas the large ones terminate either mixed type or edge type TDs. At sufficiently large layer thickness, the IDs originating from the GaN template lead to the formation of concentric trenches at the layer surface, and this is related to the change in growth kinetics on top and at the immediate surroundings of the ID.

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Section: Introductionmentioning

confidence: 99%

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Ammar

Minj

Chauvat

et al. 2017

Journal of Microscopy

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“…In recent years, UV-light emitting diodes (LEDs) and laser diodes (LDs) based on group-III nitride semiconductors have been developed in many research organizations [1][2][3][4][5][6][7]. AlGaN has a direct transition band gap ranging from 3.43 to 6.05 eV at room temperature (RT) and is very attractive for the realization of high-brightness UV LEDs and LDs.…”

Section: Introductionmentioning

confidence: 99%

Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters

Mori

Nagamatsu

Nonaka

et al. 2009

Phys. Status Solidi (c)

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Microstructural analysis was carried out to clarify the compositional dependence of the generation of dislocations in AlxGa1‐xN on an underlying AlN layer grown by metalorganic vapor phase epitaxy. When the film thickness is less than 1.5 μm, the threading dislocation density (TDD) increases with decreasing AlN molar fraction. However, when the film thickness exceeds 1.5 μm, TDD becomes maximum at x around 0.5. The growth of AlGaN on a grooved AlN template is effective in reducing TDD for all AlN molar fractions. TDD in AlGaN, which is close to binaries such as GaN and AlN, is a few 107 cm–2, while for the intermediate composition with x around 0.5, TDD is still at mid 108 cm–2. The activation energy of Mg in AlGaN is found to show a strong Mg concentration dependence with a negative one‐third power law in Al0.25Ga0.75N and Al0.5Ga0.5N as well as in GaN. Overdoping of Mg causes an increase in the activation energy for every composition; from this, the optimum Mg concentration for realizing the highest hole concentration can be deduced. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…AlGaN and InAlGaN alloys are very attractive for realizing high-efficiency DUVLEDs and LDs [1,2]. Several groups have reported AlGaN-, InAlGaN-, or AlN-based DUV LEDs, such as 333-350 nm AlGaN LEDs [3][4][5], 240-280 nm AlGaN multiquantum-wells (MQWs) LEDs [6][7][8], quaternary InAlGaN MQW LEDs [9,10] and a 210 nm AlN LED [11].…”

mentioning

confidence: 99%

Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

Hasegawa

Norimatsu

Noguchi

et al. 2009

Phys. Status Solidi (c)

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We demonstrated CW milliwatt power operations of 270 nm‐band AlGaN multi‐quantum well (MQW) deep‐ultraviolet (DUV) light‐emitting diodes (LEDs) fabricated on epitaxial lateral overgrowth (ELO) AlN templates on sapphire. An initial AlN stripe layer was grown directly on sapphire by using ammonia (NH3) pulse‐flow multilayer (ML) growth method. An AlN stripe structure with a width of 5 μm and a spacing of 3 μm was completely coalesced after the growth of an approximately 15 μm‐thick ELO‐AlN layer grown by low‐pressure metal‐organic chemical vapor deposition (LP‐MOCVD). The edge‐type threading dislocation density (TDD) of the wing region of the ELO‐AlN layer was 3×108 cm‐2, as observed by cross‐sectional transmission electron microscope (TEM) image. The maximum output power of 2.7 mW was obtained from an AlGaN MQW LED with emission wavelength at 273 nm fabricated on ELO‐AlN template under room temperature (RT) CW operation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates

Cited by 46 publications

References 23 publications

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy: effects of threading dislocations and inversion domains from the GaN template

Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters

Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates

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