Ultraviolet light from porous silicon by a microscopic discharge

Kozlowski, F.; Steiner, P.; Sauter, Martin; Lang, Walter

doi:10.1016/0022-2313(93)90130-f

Cited by 7 publications

(5 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The sharp emission lines superimposed on the red EL were the second orders of the UV emissions, and this gives direct comparison of the intensities between the visible band and the second orders UV emission. These sharp UV emissions have the characteristic of atomic lines and are the same as that reported by Kozlowski et al [9]. In order to demonstrate the intensity of the PS LED UV EL, a single crystal of Tbdipicolinic acid, was placed directly in front of the LED.…”

Section: Resultsmentioning

confidence: 85%

“…5), and there were no observable pores larger than µm in dimension. This raises doubt that the UV emission is really related to microsized N 2 plasma, as proposed by Kozlowski et al [9]. To further clarify the argument, several samples were annealed in Ar ambient at 150 o C for 20 minutes.…”

Section: Shown Inmentioning

confidence: 95%

“…However, applicable devices are still not available due to the low efficiency, poor durability, and broad emission. In 1993, Kozlowski et al [9] reported ultraviolet light emission from porous silicon LEDs. The emission was sharp and was attributed to N 2 discharging in the microsized cavities inside the PS.…”

Section: Introductionmentioning

confidence: 98%

See 2 more Smart Citations

Strong ultraviolet electroluminescence from porous silicon light-emitting diodes

Tam

Yuan

et al. 2001

MRS Proc.

View full text Add to dashboard Cite

Porous silicon light-emitting diodes were found to emit strong line-shaped ultraviolet under a forward bias driving voltage of about 20 volts. The intensity was sufficiently strong to pump an organic crystal, Tb-dipicolinic acid, producing clear Tb 4f intra-shell transition photoluminescence spectrum. The current-voltage characteristics of the devices also showed negative differential resistance, which was frequency dependent. In addition, purging of the device with various gases could quench the electroluminescence but the intensity recovered partially after each purging, but with no change in emission spectrum. Both results indicate the transport was influenced strongly by local space charge. From the results, the electroluminescence mechanism is tentatively attributed to core recombination in the porous layer, and the spectral characteristics is due to the microcavity effect between the top Au contact and silicon substrate. The present study shows that porous silicon has the potential as UV source in optoelectronics applications.

show abstract

Section: Resultsmentioning

confidence: 85%

Section: Shown Inmentioning

confidence: 95%

See 1 more Smart Citation

Strong ultraviolet electroluminescence from porous silicon light-emitting diodes

Tam

Yuan

et al. 2001

MRS Proc.

View full text Add to dashboard Cite

show abstract

“…Recent experimental results [ 1,2] ascertain the possibility of UV-light generation using a field emission device involving porous silicon. The proposed physics of the process, which is supported by several observations and spectroscopic measurements, involves the ionization of the residual air molecules (specifically nitrogen, N2) through collision with the field emitted electrons and then UV-light generation whilst recombining.…”

Section: Introductionmentioning

confidence: 98%

“…One solution would be, as experimentally reported [1,2] to use a porous silicon layer for field emission. In this case, the distributed electron source and also the trapping of the NZ molecules in the porous layer holes could help the phenomenon to take place.…”

Section: Introductionmentioning

confidence: 99%

Proposal for a new UV-light generating device based on cold electron emission

Nicolaescu

Filip

Okuyama

9th International Vacuum Microelectronics Conference

View full text Add to dashboard Cite

A new device intended for UV-light generation and based on cold electron emission is proposed and anahzed theoretically. The device operation is based on the ionization by the field emitted electrons of the surrounding nitrogen Cn, ) molecules, which in turn emit W-light. The device should operate at low pressures compatible with field emission. The proposed device involves electrons moving in crossed electric E and magnetic B jelds. Equations for the electron time evolution (both radial and angular position) are obtained. When moving inside the device, the electron has a periodical cycloid-like trajector), which is always conjned between two coaxial cylinders. The inner cylinder has the same radius and position with the circular array of emitters used for electron generation. The position of the outer cylinder (and so the width of the conjnement zone) is controlled by E and B. The described analytical-numerical approach is used to analyze the device operation as finction of model parameters.

show abstract

About theI–V characteristic of metal-porous silicon diodes

Giebel

Pavesi

1995

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

The room temperature current/voltage (I–V) characteristics of several porous silicon(PS)/metal diodes are measured. Different metals are used to form the contacts. Severe stress is also applied to the diodes and the I–V characteristics of stressed diodes are analysed. The present study supports the description of Ben Chorin et al. of these diodes, where the rectifying junction is placed at the interface between the PS layer and the bulk Si and the carrier transport through the PS layer is determined by a hopping mechanism.

show abstract

Ultraviolet light from porous silicon by a microscopic discharge

Cited by 7 publications

References 2 publications

Strong ultraviolet electroluminescence from porous silicon light-emitting diodes

Strong ultraviolet electroluminescence from porous silicon light-emitting diodes

Proposal for a new UV-light generating device based on cold electron emission

About theI–V characteristic of metal-porous silicon diodes

Contact Info

Product

Resources

About