Ultraviolet Optical Properties of Diamond

Osantowski, John F.; Walker, William C.

doi:10.1103/physrev.134.a153

Cited by 60 publications

(12 citation statements)

References 10 publications

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“…Both band models in Figure 5 indicate that L,-L,. is about 11 or 12 eV, considerably less than Phillips's speculative estimate [50] of 16.3 eV, which was based on his interpretation of the optical reflectivity spectrum of diamond as measured by Walker and Osantowski [53]. (This spectrum showed some structure near 16 eV.j There is no longer any evidence of structure near 16 eV in more recent measurements [52], nor in fact was there any in earlier independent measurements by Philipp and Taft [54].…”

Section: Energy Band Structure Of Diamond and Cubic Silicon Carbide 549mentioning

confidence: 86%

Energy band structure of diamond, cubic silicon carbide, silicon, and germanium

Herman

Kortum

Kuglin

2009

Int. J. Quantum Chem.

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We have developed a method for determining the band structure of crystals which combines the best features of a first-principles approach with the best features of an empirical approach. The first step in our method is a first-principles OPW band calculation based on the free-electron exchange approximation. In the second step, we depart from a purely first-principles approach, and introduce a small empirical correction which brings key features of the calculated energy level scheme into exact (or close) agreement with the most reliably established features of the experimental level scheme. In addition to obtaining reliable energy band models valid over a wide energy range, we obtain the electronic wave functions for a large number of levels, the core and valence electronic charge distributions, and many other "first-principles" quantities. Following a summary of the shortcomings of purely first-principles and purely empirical band calculations, we sketch the essential features of our intermediate treatment. Recent studies of the band structure of diamond, cubic silicon carbide, silicon, and germanium-carried out both by our method and other methods-are then discussed and compared. It is shown how improved band models for these crystals can be generated with the aid of some crucial information about the band structure derived from experiment. Finally, we observe that although the use of a universal exchange potential is an important simplification, and one that has greatly accelerated recent progress in energy band calculations, this approximation is to some extent an oversimplification. I t appears likely that some of the empirical corrections that we now have to introduce in order to bring theory and experiment closer together could be reduced substantially if we could define one exchange potential for s-like electrons, another for p-like electrons, and still another for d-like electrons. This idea of I-dependent exchange potentials represents a middle ground between the Hartree-Fock extreme of different exchange potentials for different orbitals, and the Slater extreme of the same exchange potential for all orbitals.

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Section: Energy Band Structure Of Diamond and Cubic Silicon Carbide 549mentioning

confidence: 86%

Energy band structure of diamond, cubic silicon carbide, silicon, and germanium

Herman

Kortum

Kuglin

2009

Int. J. Quantum Chem.

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“…Eq.(2)). The inset shows the reflectance r(l) and the absorption coefficient a(l) derived from Refs [10][11][12][13][14]…”

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confidence: 99%

Performance of diamond detectors for VUV applications

BenMoussa

Theissen

Scholze

et al. 2006

Nuclear Instruments and Methods in Physics Research Section A:

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“…Pure diamond is a wide-gap semiconductor with the band gap of 5.5 eV. [1,2] As the inspiration of adding impurity to semiconductor like silicon, the microwave plasma chemical vapor deposition (MPCVD) method as well as high pressure high temperature(HPHT) synthesizing skills are popularly used recently to add dopants into pure diamond, with the purpose to find out how impurities play roles in diamond. [3,4] The most attractive impurity now should be boron as single electron acceptors.…”

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confidence: 99%

Optical properties of boron-doped diamond

Wang

et al. 2006

Phys. Rev. B

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We report optical reflectivity study on pure and boron-doped diamond films grown by a hotfilament chemical vapor deposition method. The study reveals the formation of an impurity band close to the top of the valence band upon boron-doping. A schematic picture for the evolution of the electronic structure with boron doping was drawn based on the experimental observation. The study also reveals that the boron doping induces local lattice distortion, which brings an infraredforbidden phonon mode at 1330 cm −1 activated in doped sample. The antiresonance characteristic of the mode in conductivity spectrum evidences the very strong coupling between electrons and this phonon mode.

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Ultraviolet Optical Properties of Diamond

Cited by 60 publications

References 10 publications

Energy band structure of diamond, cubic silicon carbide, silicon, and germanium

Energy band structure of diamond, cubic silicon carbide, silicon, and germanium

Performance of diamond detectors for VUV applications

Optical properties of boron-doped diamond

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