Ultraviolet photodetectors using hollow p-CuO nanospheres/n-ZnO nanorods with a pn junction structure

Fabrication of a UV Photodetector Based on n-TiO2/p-CuMnO2 Heterostructures

“…Lately, sensory technology has evolved and is constantly growing to improve the quality of life and environmental protection. Hence, ZnO [2], TiO 2 [3], CuO/Cu 2 O [4], SnO/SnO 2 [5], and VO 2 /V 2 O 5 [6] are some examples of metal oxides and have been extensively studied for use as high-performance UV photodetectors [7]. These types of materials can have different structures, from nanowires to nanospheres, which have a direct influence on their performance in detection applications.…”

Photosensitive activity of fabricated core-shell composite nanostructured p-CuO@CuS/n-Si diode for photodetection applications

“…Improved photo response and carrier transport mechanism of ZnO/graphene core-shell structure-based photo detector was reported by Shao et al [ 13 ]. In recent past CuO & CuS based core-shell photodetectors has been developed by several scientists like the p-CuO/n-MoS 2 flexible heterojunction photo detector was reported by Zhang et al with low-dark current ∼ 0.039 nA and highest detectivity ∼ 3.27 × 10 8 Jones [ 14 ], Wang et al developed the nanostructured p-CuO/n-ZnO heterojunction photodetector and observed the responsivity ∼ 0.040A/W at 1 V and 0.123 A/W at 2 V, Xie et al reported the CuO/SnO 2 UV photodetector and noticed the enhancement [ 15 ], Tian et al fabricated the In 2 Ge 2 O 7 photodetector with CuO coating and observed the high responsivity and quantum efficiency ∼ 7.34 × 10 5 A W −1 & 3.5 × 10 6 , respectively [ 16 ], Sahatiya et al reported the MoS 2 (n)–CuO(p) flexible diode on cellulose paper with ideality factor 1.89 eV, barrier height 0.243 eV, and responsivity ∼ 42 mA/W [ 17 ], Shin et al developed the p-CuO/n-Cu 1-x In x O core/shell UV photodetector and noticed the photoresponsivity ∼ 0.045 A/W [ 18 ], CuO/ZnO based UV photodetector with improved electrical nature was developed by Noothongkaew et al [ 19 ], UV detector based on ZnO/CuO was fabricated with by Vikas et al [ 20 ], Mohammadi et al reported the ZnO/NiO(CuO) photodetector with enhanced properties [ 21 ], p-CuO/n-ZnO photodetectors has been fabricated by Ji et al [ 22 ]. Xu et al p‐CuS‐ZnS/n‐ZnO photodetectors with responsivity ∼ 12 mA W −1 at 300 nm [ 23 ], Zhnag et al developed the n‐SrTiO3 (n‐STO) and p‐CuS‐ZnS (p‐CZS) photodetectors with highest responsivity ∼ 5.4 μA W −1 (at 390 nm), detectivity ∼ 1.6 × 10 9 Jones [ 24 ], Panigrahi et al fabricated n-ZnO/p-CuS photodetectors and investigated [ 25 ], etc.…”

Photodetecting properties of single CuO–ZnO core–shell nanowires with p–n radial heterojunction

“…Copper oxide (CuO) is a p-type semiconductor with a narrow band gap in the range of 1.2–2.1 eV 23 , and high optical absorption in the visible range. It is also highly versatile and easy to prepare material, suitable for applications in field effect transistors 24 , photodetectors 25 , light emitting diodes 26 , solar cells 27 , photocatalysis 28 , etc. Zinc oxide (ZnO) is a n-type semiconductor with a wide band gap (3.37 eV), a 60 meV exciton binding energy 29 .…”