Ultraviolet photoelectron spectroscopy of Si 4- to Si 1000-

Abstract

Using a new experimental setup we have measured UV (hν = 6.4 eV) photoelectron spectra of cold silicon cluster anions Si − n in a very broad size range. For sizes up to n = 46 the spectra exhibit rich structures. For larger sizes only smooth spectra have been obtained. No trace of a bandgap has been found even for clusters with more than 1000 atoms.PACS. 36.40.Mr Spectroscopy and geometrical structure of clusters -33.60.Cv Ultraviolet and vacuum ultraviolet photoelectron spectra -71.24.+q Electronic structure of clusters and nanoparticles

Optical Properties of Sin+ (n = 6–100) Clusters: The Approach to Bulk Behavior

“…Special importance is attracted by the absorptions in the low-energy regime starting from 3.5 eV corresponding to the clusters with 16, 17, 18, 20, 21, and to some extent 26 atoms. For the species in this size range prolate structures are observed experimentally − ,,− and also indicated quantum chemically. ,,,,− Interestingly the Mie–Gans theory as well predicts enhanced absorption for p-Si starting from 3.3 eV for prolate structures. In this sense, the increased absorption in the clusters with 16, 17, 18, 20, 21, and 26 atoms might be seen as an indication for the exceptional prolate growth habit of the intermediate-sized Si clusters.…”

Geometric structure, electron-energy spectrum, and growth of anionic scandium-silicon clusters ScSin- (n = 6–20)

“…At the same time, an experimental study of the electron structure of clusters is possible and thus can be used to refine the computational model. [7][8][9] The combination of the modeled cluster geometric structure and the electron spectra with experimentally obtained photoelectron spectra allow experimental determination the clusters geometric structure. This paper presents the geometric structure and the electron energy spectrum calculation result of several siliconscandium anion clusters ScSi À n (n ¼ 6-20).…”

Gas-phase structures of neutral silicon clusters

“…Because of the technological relevance of silicon, many experimental studies have focused on nano-scale Si particles and clusters. In the gas phase, where isolated bare (but also doped) silicon clusters can be studied and therefore act as an ideal model systems, the electronic as well as geometric properties of silicon clusters have been investigated, e.g., by resonance enhanced multiple photon electron detachment, 5 anion photoelectron spectroscopy, [6][7][8][9][10] photoionization efficiency spectroscopy, 11,12 ion mobility, 13 and various other methods.…”