Ultraviolet Random Laser Based on a Single GaN Microwire

Ren, Yuhao; Zhu, Hai; Wu, Yanyan; Lou, Guanlin; Liang, Yun-Feng; Li, Shuti; Su, Shichen; Gui, Xuchun; Qiu, Zhiren; Tang, Zikang

doi:10.1021/acsphotonics.8b00336

Cited by 19 publications

(16 citation statements)

References 38 publications

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“…The FFT analysis has been widely used to analyze the formation of closed feedback loop resonant cavities for random lasing. The FFT spectrum of a well-established laser cavity has several sharp Fourier harmonics controlled by the equation d m = mL c n /π, where d m is the Fourier harmonics, m is the order of the Fourier harmonic, L c is the effective optical cavity length, and n is the refractive index of the random lasing system. , The cavity length can be determined conveniently by this equation. In Figure b, we substituted the first sharp peak d 1 of 49.98 μm at 0° and 28.71 μm at 60°.…”

Section: Results and Discussionmentioning

confidence: 99%

Room-Temperature Near-Infrared Random Lasing with Tin-Based Perovskites Prepared by CVD Processing

Chen

Lin

et al. 2021

J. Phys. Chem. C

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Nontoxic metal-halide perovskite materials have triggered a revolution of emitting devices as well as solar cells. In this work, we demonstrate a lead-free γ-CsSnI 3 perovskite random lasing operated at room temperature in ambient air. The high-purity γ-CsSnI 3 films with the orthorhombic structure were grown by chemical vapor deposition (CVD). From the absorption and photoluminescence (PL) spectra, the intense PL emission at 950 nm is consistent with the γ-CsSnI 3 band-edge absorption. Moreover, the PL stability test shows the prolonged stability of CVD-grown films. With increasing excitation energy above 18 mJ/cm 2 , the random laser with a high Q-factor (∼3000) is achieved.

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Section: Results and Discussionmentioning

confidence: 99%

Room-Temperature Near-Infrared Random Lasing with Tin-Based Perovskites Prepared by CVD Processing

Chen

Lin

et al. 2021

J. Phys. Chem. C

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“…25 Note that the lasing spikes are not as obvious as those in the previous studies, which may be attributed the intrinsic defects of AlGaN. 12,13,15,16,57 Excessive transition through defect states will cause luminescence attenuation in the deep-ultraviolet range and further affect the optical gain in the formation of closed loops. Indeed, it is known that incorporation of high Al composition into GaN will deteriorate the material quality and attenuate the luminescence intensity of AlGaN.…”

Section: Resultsmentioning

confidence: 80%

Anderson Localization Enabled Spectrally Stable Deep-Ultraviolet Laser Based on Metallic Nanoparticle Decorated AlGaN Multiple Quantum Wells

Shen

et al. 2020

ACS Nano

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Random lasers exhibit many exotic properties, including chaotic behavior, light localization, broad angular emission, and cost-effective fabrication, which enable them to attract both scientific and industrial interests. However, before the realization of their potential applications, several challenges still remain including the underlying mechanism and controllability due to their inherent multidirectional and chaotic fluctuations. Through more than two decades of collaborative efforts, the discovery of Anderson localization in random lasers provides a plausible route to resolve the difficulties, which enables one to tailor the number of lasing modes and stabilize the emission spectra. However, the related studies are rather rare and only restricted to limited wavelengths. In this study, based on enhanced Anderson localization assisted by surface plasmon resonance, spectrally stable deepultraviolet lasing action in AlGaN multiple quantum wells (MQWs) is demonstrated. Our work serves as firm evidence to demonstrate the underlying mechanism of stabilized deep-ultraviolet random laser action that multiple scattering of a light beam in a disordered medium can induce Anderson localization similar to electron behavior. This feature covers the whole spectral range, and it is a universal phenomenon of an electromagnetic wave. Notably, stabilized deep-ultraviolet random laser action has not been demonstrated in all previous studies, even though it has great academic interest and potential application in many areas from environmental protection to biomedical engineering.

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“…This can be understood by considering “coherent” and “incoherent” types of random lasers. [ 32–34 ] Random lasers with incoherent or nonresonant feedback are called incoherent random lasers, in contrast, random lasers with coherent or resonant feedback are called coherent random lasers. [ 34 ]…”

Section: Random Lasing Performancementioning

confidence: 99%

Threshold Size Effects in the Patterned Crystallization of Hybrid Halide Perovskites for Random Lasing

Wang

Tang

et al. 2021

Advanced Photonics Research

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A threshold effect in the periodical patterning of the hybrid halide perovskites and a directional output coupling effect in the incoherent random lasing from the patterned materials are reported. Using 1D gratings, the random crystallization process is confined into the grating grooves, producing continuous microstrips of CH3NH3PbBr3 along the groove channels. However, the confinement is strongly dependent on the width of the grating grooves, which can be optimized by tuning the patterning periods. It is thus discovered that the most orderly arranged crystal strips are achieved for a grating period of 10 μm, corresponding to a channel width of about 5 μm, which is the lower limit for the formation of continuous crystal strips. Complicated interfaces inside such randomly organized multicrystals supplied scattering centers for optical gain mechanisms. Thus, incoherent random lasing actions are observed for all of these patterned structures, however, the best lasing performance is achieved for a grating period of 10 μm, which agrees with the highest quality of the crystal strips. The patterned substrate with a 1D grating supplies mechanisms for directional crystallization of hybrid halide perovskites and directional output coupling of random laser emission, enhancing significantly the practical application possibilities of such random lasers.

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Ultraviolet Random Laser Based on a Single GaN Microwire

Cited by 19 publications

References 38 publications

Room-Temperature Near-Infrared Random Lasing with Tin-Based Perovskites Prepared by CVD Processing

Room-Temperature Near-Infrared Random Lasing with Tin-Based Perovskites Prepared by CVD Processing

Anderson Localization Enabled Spectrally Stable Deep-Ultraviolet Laser Based on Metallic Nanoparticle Decorated AlGaN Multiple Quantum Wells

Threshold Size Effects in the Patterned Crystallization of Hybrid Halide Perovskites for Random Lasing

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