Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Liu, Qiaoli; Xu, Li; Jin, Yuxin; Zhang, Shifeng; Wang, Yitong; Hu, Anqi

doi:10.3390/s22103873

Cited by 3 publications

(2 citation statements)

References 31 publications

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“…For each, avalanche photodetectors (APDs) have been successfully employed as the primary detectors to meet the sensitivity and responsivity requirements [7]- [9]. Silicon is a desirable material for APDs due to its ability to detect a wide range of wavelengths, ranging from ultra-violet (UV) to near-infrared (NIR), and has demonstrated desirable multiplication properties [8], [10]- [15]. Its desirable multiplication properties have also motivated its use as the multiplier material for infrared heterojunction APDs, such as Ge-on-Si [11]- [13], [16], or GeSn-on-Si [17] photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors

Liu,

Errico,

Alasio

et al. 2024

IEEE Photonics J.

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This work presents a systematic study of the sensitivities of silicon avalanche photodiode (APD) performance metrics, including gain, excess noise, and bandwidth, to potential variabilities in the fabrication process. The APDs simulations are performed using a state-of-the-art Full-Band Monte Carlo (FBMC) device simulator with the integrated band structure and scattering rates calculated ab−initio with density-functional theory (DFT). The focus of this work is placed on the performance of CMOS-compatible lateral transport separate-absorbermultiplier APDs (SAM APDs) fabricated on an SOI layer. The FBMC material models are validated against experimental data for carrier velocities and impact ionization coefficients, in addition to the reported APD performance of a germaniumon-silicon (Ge-on-Si) separate-absorber-charge-multiplier APD (SACM APD). The fabrication variations considered for the SAM APD include slight variations to the doping concentration and physical dimensions of the multiplier and absorber regions, as well as the thickness of the SOI layer. The results show that fabrication variations may have significant effects on the gain of the APD, but minimally affect the excess noise factor and bandwidth of the devices.

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Section: Introductionmentioning

confidence: 99%

Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors

Liu,

Errico,

Alasio

et al. 2024

IEEE Photonics J.

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“…Ultraviolet detection technology displays extensive applications, such as missile warning, space exploration, fire detection, instrumental analysis, and biomedical research [1][2][3][4][5]. Traditional ultraviolet detectors contain vacuum-type ultraviolet detectors and solid-state ultraviolet detectors [6].…”

Section: Introductionmentioning

confidence: 99%

Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity

Guo,

Chen,

Zheng

et al. 2023

Photonics

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To improve the low responsivity of the silicon avalanche photodiode in the near-ultraviolet wavelength range, we designed a near-ultraviolet highly responsive Si-APD basic structure with a multiplication layer neighboring the photosensitive surface through the analysis of the optical absorption characteristics, junction breakdown characteristics, and avalanche multiplication characteristics. The dark current and electric field distribution of the device were investigated. Meanwhile, the structural parameters of the surface non-depleted layer, multiplication layer, and absorption layer were optimized. It was found that the breakdown voltage of the device is 21.07 V. At an applied bias voltage of 20.02 V, the device exhibits a responsivity of 6.79–14.51 A/W in the wavelength range of 300–400 nm. These results provide valuable insights for the design of silicon avalanche photodiode with high responsivity in the near-ultraviolet range.

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Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

Xu,

Feng,

Guo

et al. 2024

Opt. Lett.

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In this work, we present a novel, to the best of our knowledge, lateral avalanche photodiode (APD) with low breakdown voltage and high bandwidth which has the potential to serve as a core device in future large-scale advanced optoelectronic hybrid chips. By taking advantage of a silicon-on-insulator (SOI) substrate combined with a separation absorption multiplier (SAM) structure, the demonstrated APDs exhibit a high gain of 148. Furthermore, the minimum breakdown voltage of the measured device is 6.1 V, which represents the lowest breakdown voltage for Si-APD, making it compatible with the existing CMOS technology for low voltage operation. Benefiting from an ultra-thin top silicon and lateral SAM structure, the problem of edge breakdown has been completely solved. Additionally, a set of device arrays with absorption and avalanche regions of different sizes is also manufactured and compared. Our findings indicate that the proposed APD has fascinating application prospects in the CMOS process-based LIDAR chips.

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Ultraviolet Response in Coplanar Silicon Avalanche Photodiodes with CMOS Compatibility

Cited by 3 publications

References 31 publications

Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors

Modeling the Impact of Fabrication Variabilities on the Performance of Silicon Avalanche Photodetectors

Research on the Structure Design of Silicon Avalanche Photodiode with Near-Ultraviolet High Responsivity

Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate

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