2007
DOI: 10.1063/1.2747546
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Ultraviolet semiconductor laser diodes on bulk AlN

Abstract: Current-injection ultraviolet lasers are demonstrated on low-dislocation-density bulk AlN substrates. The AlGaInN heterostructures were grown by metalorganic chemical vapor deposition. Requisite smooth surface morphologies were obtained by growing on near-c-plane AlN substrates, with a nominal off-axis orientation of less than 0.5°. Lasing was obtained from gain-guided laser diodes with uncoated facets and cavity lengths ranging from 200 to 1500 μm. Threshold current densities as low as 13 kA/cm2 were achieved… Show more

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Cited by 156 publications
(101 citation statements)
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“…[39] AlN substrates are the more promising current possibility. [40,41] On such substrates, higher-Al-content AlGaN heterostructures can be grown with relatively lower strain. And, even if the residual strain becomes significant, the strain is compressive rather than tensile and so does not tend to cause extended cracks.…”
Section: Single-crystal Substratesmentioning
confidence: 99%
“…[39] AlN substrates are the more promising current possibility. [40,41] On such substrates, higher-Al-content AlGaN heterostructures can be grown with relatively lower strain. And, even if the residual strain becomes significant, the strain is compressive rather than tensile and so does not tend to cause extended cracks.…”
Section: Single-crystal Substratesmentioning
confidence: 99%
“…[4][5][6][7] These applications in turn triggered improvements in the growth of high-quality AlN, [8][9][10] only recently allowing us to investigate the fundamental properties of this semiconductor in unpreceded quality. For example, the full width at half maximum of donor bound-exciton recombinations in AlN could be shown to be below 500 μeV, allowing for unambiguous identification of these lines, 11,12 or the optical properties of nonpolar quantum wells in AlN barriers could be understood.…”
Section: Introductionmentioning
confidence: 99%
“…While these substrates allowed certain advances into the UV spectral range so far, their future application is problematic due to the naturally by heteroepitaxy introduced strain levels and defects [2,4]. As a result, high structural defect concentrations are commonly observed in heteroepitaxially grown films, seriously degrading the material quality [1,5].…”
Section: Introductionmentioning
confidence: 99%
“…The continuous progression of AlGaN-based light emitting diodes and laser diodes towards emission in the deep ultraviolet (UV) spectral range [1] is accompanied by the need for alternative substrates in order to replace the commonly applied GaN, GaN/sapphire [2], and SiC substrates [3]. While these substrates allowed certain advances into the UV spectral range so far, their future application is problematic due to the naturally by heteroepitaxy introduced strain levels and defects [2,4].…”
Section: Introductionmentioning
confidence: 99%