Ultraviolet–Visible photo-response of p-Cu2O/n-ZnO heterojunction prepared on flexible (PET) substrate

ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response

“…The photoresponse of these original ZnO/CuCrO 2 core–shell NW heterostructures presents similar values of wavelength detection, responsivity, and rise and decay times, when compared to other ZnO‐based UV photodetectors, as presented in Table 1 . In the case of p‐type oxides, the device present in this work shows a good compromise between high responsivity to the UV light and short response times, in direct comparison with NiO and Cu 2 O detectors. The present findings reveal that all‐oxide core–shell NW heterostructures grown by chemical deposition techniques are indeed promising candidates as self‐powered UV photodetectors.…”

“…Short rise and decay times, as low as 500 ns and 6.7 µs, respectively, were also achieved for CuSCN . Very recently, self‐powered UV photodetectors based on ZnO/Cu 2 O core–shell NW heterostructures have been shown to exhibit high responsivity in the UV and visible parts of the electromagnetic spectrum owing to the 2.2 eV bandgap energy of Cu 2 O . Bu used the sol–gel process to fabricate ZnO/delafossite–CuAlO 2 core–shell NW heterostructures with a rectification ratio of 4.7 at ±1 V, an open‐circuit voltage ( V oc ) of 250 mV, and a short‐circuit current ( I sc ) of 6.6 µA; however, no responsivity measurements were presented.…”

Flexible Photodetectors Based on Novel Functional Materials

“…Photodiodes can provide an improved detectivity and sensitivity due to the lowest dark current, as well as fast response speeds thanks to efficient separation of photocarriers by the built‐in electric field . Flexible photodiodes based on 1D inorganic nanostructure p‐n junctions or Schottky junctions have also attracted considerable research interest in recent years . Huang et al presented flexible NIR photodetectors based on p‐n junctions of multi‐walled CNTs, which exhibit a evidently enhanced photoresponse compared with detectors based on p‐type or n‐type CNTs only .…”

The influence of Cu2O crystal structure on the Cu2O/ZnO heterojunction photovoltaic performance

“…Cuprous oxide (Cu 2 O) is one of the most studied metal oxide semiconductor. It is a p-type metal oxide semiconductor with a direct energy bandgap of 2.1 eV and a large free-exciton binding energy of 140 meV [1,2]. On the other hand, the wide-band gap n-type ZnO was considered as a promising material that can be used as window layer in many solar cell structures due to its direct wide band gap (3.37 eV) [3] …”