Ultrawideband LNA 1960–2019: Review

Shahrabadi, Shahab

doi:10.1049/cds2.12071

Cited by 6 publications

(7 citation statements)

References 378 publications

(1,524 reference statements)

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“…Generally, FOM is a total figure‐of‐merit which shows the ratio of “all figures‐of‐merit which must have large values” to “all figures‐of‐merit which must have small values”, hence, it means that the LNA with high FOM is optimum. Since 2004, engineers have suggested several FOMs to determine optimum LNAs, which are observable in [2].…”

Section: Discussionmentioning

confidence: 99%

“…As shown in Figure 11, the limiter which does the filtering is just composed of one node (the node “x”), and Figures 17, 20 illustrate that the limiter does not have any destructive effects on the bandwidth because its flatness is kept from

V_{x}

V_{out}

. It is worth noting that the positive effect of

g_{m}

‐boosting on gain flatness has been proved several times by other engineers during last decade, see [2].…”

Section: System Design With Nf and Iip's Errorsmentioning

confidence: 94%

“…Several ideas have been proposed since 1960 [2] to design WB/UWB LNAs that the most remarkable ones were

g_{m}

‐boosting [45–108] and noise/distortion cancellation [77–141] topologies.

G_{m}

‐boosting can render a low noise figure (NF), low power consumption (

P_{dc}

) and flat gain, that its general idea is based on a common‐gate (CG) amplifier which its

P_{dc}

and NF were reduced simultaneously by an inverting gain unit (‐A) applied between the source and gate terminals of CG [51].…”

Section: Introductionmentioning

confidence: 99%

“…But the proposed techniques for noise/distortion cancellation and

g_{m}

‐boosting topologies had some disadvantages [2] in terms of bandwidth, gain and power. For instance,

g_{m}

‐boosting did not lead to low NF and high Gain simultaneously in a ultrawide bandwidth although it offered proper NF and Gain in a wide or narrower bandwidth, and on the other hand, noise/distortion cancellation was not able to cancel the noise and nonlinearity of the LNA's output‐stage transistors.…”

Section: Introductionmentioning

confidence: 99%

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Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

Shahrabadi

2021

IET Communications

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The goal is to illustrate new errors about using the figures-of-merit NF and IIP, by investigating an AGC-less microwatt ultrawideband g m -boosted CMOS RF system with noise/distortion cancellation. The system composed of limiter and LNA is designed for 0.3-10.7 GHz at 1.8 V. Thanks to the limiter, the impact of noises and distortions is cancelled and the LNA acts linear without any saturation or block, as well as, it becomes AGC-less. Additionally, achievements prove that NF and IIP sometimes can be accompanied by error, hence engineers must always consider all aspects of a system together during their evaluations. Although this work is not experimental, it applies different methods such as "Regenerating", "Comparing Calculations with Simulations" and "Monte Carlo" to demonstrate the reliability of achievements for applying in a SAW-less RFIC.

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Section: Discussionmentioning

confidence: 99%

V_{x}

V_{out}

. It is worth noting that the positive effect of

g_{m}

‐boosting on gain flatness has been proved several times by other engineers during last decade, see [2].…”

Section: System Design With Nf and Iip's Errorsmentioning

confidence: 94%

“…Several ideas have been proposed since 1960 [2] to design WB/UWB LNAs that the most remarkable ones were

g_{m}

‐boosting [45–108] and noise/distortion cancellation [77–141] topologies.

G_{m}

‐boosting can render a low noise figure (NF), low power consumption (

P_{dc}

) and flat gain, that its general idea is based on a common‐gate (CG) amplifier which its

P_{dc}

and NF were reduced simultaneously by an inverting gain unit (‐A) applied between the source and gate terminals of CG [51].…”

Section: Introductionmentioning

confidence: 99%

“…But the proposed techniques for noise/distortion cancellation and

g_{m}

‐boosting topologies had some disadvantages [2] in terms of bandwidth, gain and power. For instance,

g_{m}

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

Shahrabadi

2021

IET Communications

Self Cite

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“…To achieve wideband operation, additional circuitry is required. Typically, this means that additional lumped components need to be added to improve the impedance matching of the amplifier to support wideband operation, feedback configuration needs to be added to widen the operable frequency range, or the narrowband amplifier needs to be cascaded [19][20][21].In this paper, dual feedbacks and bandpass matching networks are combined to expand the bandwidth of LNA and to select the input signal simultaneously. Figure 1 shows the block diagram of the proposed wideband LNA module.…”

Section: Proposed Lna Designmentioning

confidence: 99%

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

Zhao

Wang

et al. 2022

Electronics

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This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity. Bias and parasitic parameters derived wide bandpass (BPDWB) matching networks and a cascode with dual feedbacks are introduced for broadband performance. Matching network design procedures are demonstrated, and results show that the frequency response of the network fits the target impedance well from 1 GHz to 3.5 GHz. The proposed BPDWB network improves the design efficiency and enhances the prediction accuracy of impedance matching. The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. A flat gain of 22.5–25.2 dB is achieved with the input voltage standing wave ratio (VSWR) below 1.22 and output VSWR less than 2.5. In addition, the proposed LNA has good linearity where the output third-order intercept point (OIP3) is better than +31.5 dBm, and the output 1 dB compression point (OP1dB) is better than +19 dBm over the wide frequency range.

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A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS

Guo

Wang

et al. 2022

IET Circuits, Devices & Syst

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A CMOS baseband‐active‐feedback receiver frontend with passive voltage‐commutating mixers is proposed. The active feedback baseband enables in‐band signal amplification and out‐of‐band blocker interference suppression by constructing the RF bandpass filter and BB lowpass filter, simultaneously. The voltage‐commutating mixers embedded in current mirrors significantly reduce the power requirement for the LO generator. The stacked n/pMOS structure is commonly adopted to further improve power efficiency. The receiver frontend is designed in a standard 65 nm CMOS process. Simulation results display an NF of 3.4 dB and a maximum gain of 32 dB from 1 to 5 GHz LO frequency range. The obtained in‐band and out‐of‐band IIP3 are −12 dBm and 9 dBm, respectively. The receiver frontend core only consumes 22 mW at 1 GHz LO frequency and occupies the area of 645 × 543 μm2, which is suitable for the low‐power application of handheld terminals.

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Ultrawideband LNA 1960–2019: Review

Cited by 6 publications

References 378 publications

Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS

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