Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV–VI multiple quantum wells

Wu, Honghui; Dai, Ning; Johnson, Mark B.; McCann, Patrick J.; Shi, Zhisheng

doi:10.1063/1.1361104

Cited by 24 publications

(18 citation statements)

References 20 publications

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“…8 the crossing is seen to happen at a thinner well ͑ϳ10 nm͒. However, this is in contradiction with the latest absorption observations: 12,16,33 the energy of the normal valley transitions is always less than the energy of oblique valley transitions, at low temperatures and at well widths up to 30 nm. Therefore the optical deformation potential values should be reconsidered.…”

Section: Theorycontrasting

confidence: 49%

“…The PbSe/ PbSrSe 16,33 and PbTe/ PbEuTe 9,34 MQW structures used are briefly described here. They were grown on freshly cleaved BaF 2 (111) substrates by MBE at temperatures of 360°C and 300°C, respectively.…”

Section: Samples and Optical Measurementsmentioning

confidence: 99%

“…Recent differential transmission spectroscopy of PbSe/ PbSrSe/ BaF 2 ͑111͒ MQW structures clearly demonstrates this validity at well widths up to 30 nm. 16 An important aspect of this work is that the authors 16 were able to measure the intervalley splitting which results directly in one ͑D u ͒ of deformation potential constants and the next one ͑D d ͒ can be obtained from the D iso relation.…”

Section: Introductionmentioning

confidence: 99%

“…Published data for PbTe/ BaF 2 strained structures 5,17,18 were also used. Based on the experimentally determined D iso and the unambiguously determined well-width dependent intervalley splitting 16 we have used a fitting procedure within an accu-rate two-band k · p model for the low energy transitions. This permitted the determination of new values for the PbSe and PbTe optical deformation potentials, which fit best the available data.…”

Section: Introductionmentioning

confidence: 99%

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Optical deformation potentials for PbSe and PbTe

et al. 2004

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The values of optical deformation potentials (D u and D d ) for PbSe and PbTe are analyzed using absorption, luminescence and x-ray diffraction data on high quality, deep quantum well PbSe/ PbSrSe and PbTe/ PbEuTe structures. Published optical data on PbTe/ BaF 2 structures were also used. It is important for these evaluations to use the value of isotropic deformation potential ͑D iso ͒ which is determined from the low temperature hydrostatic pressure experiments and the intervalley splitting which was determined from differential absorption spectroscopy. The fitting procedure was done using an accurate k · p model for the band structure near the fundamental gap including anisotropy, multivalley, and band nonparabolicity effects. Photoluminescence was measured in pulsed mode at 4 and 77 K, which gives the lowest energy state in the rectangular well. The strain and well parameters were measured with a high resolution x-ray diffractometer. We find the new optical deformation potential values at low temperatures: D u = −0.2 and −0.5 eV, and D d = 5.3 and 3.5 eV for PbSe and PbTe, respectively.

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Section: Theorycontrasting

confidence: 49%

Section: Samples and Optical Measurementsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical deformation potentials for PbSe and PbTe

et al. 2004

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“…It determines not only the energy levels but also the overlap of the electron and hole wave functions, and thus, the oscillator strengths of the optical transitions. While for the PbSe/PbSrSe 12,13 and PbTe/PbEuTe 14 systems, a type I alignment has been established at temperatures up to 300 K, controversial results have been reported for the PbSe/PbEuSe system, where some experiments were interpreted as giving evidence for a staggered type II band alignment, 15,16 while others have indicated an almost symmetric type I configuration. 17,18 Moreover, a pronounced temperature dependence, changing from type I at low temperatures to staggered type II above 180 K has been proposed.…”

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confidence: 97%

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Simma

Bauer

Springholz

2012

Applied Physics Letters

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The band offsets of PbSe/Pb1−xEuxSe multi-quantum wells grown by molecular beam epitaxy are determined as a function of temperature and europium content using temperature-modulated differential transmission spectroscopy. The confined quantum well states in the valence and conduction bands are analyzed using a k·p model with envelope function approximation. From the fit of the experimental data, the normalized conduction band offset is determined as 0.45±0.15 of the band gap difference, independently of Eu content up to 14% and temperature from 20 to 300 K.

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Materials and device designs for thermophotovoltaic power conversion

McCann

Khodr

2023

Energy Science & Engineering

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Two IV–VI semiconductor alloys, Pb0.81Sn0.19Se and Pb0.8Sr0.2Se, are proposed for use in designing multiple quantum well (MQW) materials and devices for thermophotovoltaic (TPV) power conversion. These materials can be epitaxially grown on silicon substrates, so they offer the potential for a low cost TPV device manufacturing technology. MQW materials examples are provided for fabricating triple junction TPV devices for power conversion with a 1400°C radiator. Optimal n‐type and p‐type layer thicknesses for each junction were determined using internal quantum efficiency expressions derived assuming all photogenerated charge collection is by diffusion. Depending on MQW material quality and assumed optical absorption levels, predicted power generation for current matched triple junction devices ranged from 1.7 to 4.6 W/cm2 and power conversion efficiencies ranged from 15.9% to 35.7%. These device performance parameters were used in a levelized cost of energy (LCOE) calculation to predict the cost of energy provided by TPV devices with a molten silicon thermal energy storage system. Results show that even for TPV devices fabricated from low quality materials, such energy storage systems will have a low enough LCOE to be competitive with other forms of energy storage and power generation.

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Unambiguous observation of subband transitions from longitudinal valley and oblique valleys in IV–VI multiple quantum wells

Cited by 24 publications

References 20 publications

Optical deformation potentials for PbSe and PbTe

Optical deformation potentials for PbSe and PbTe

Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures

Materials and device designs for thermophotovoltaic power conversion

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