Uncertainty of a hybrid surface temperature sensor for silicon wafers and comparison with an embedded thermocouple

Iuchi, Tohru; Gogami, A.

doi:10.1063/1.3274676

Cited by 10 publications

(7 citation statements)

References 2 publications

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“…II A and II B have been previously evaluated. The primary factors that contribute to the uncertainties are the hybrid surface temperature sensor used to monitor the surface temperature of the silicon wafer, 11 the measurement principle, and the polarized radiometers. The expanded uncertainty U c = ku c (k = 2) was less than 5 • C. 8,9 A possible cause for the validity of the emissivitycompensated radiation thermometry methods is that the refractive indices of the dielectric films (SiO 2 and Si 3 N 4 ) vary very little and their extinction coefficients are negligible at high temperatures, which make the films transparent.…”

Section: B Methods For Simultaneously Measuring Emissivity and Tempermentioning

confidence: 99%

“…A hybrid surface temperature sensor was developed to rapidly and easily monitor the surface temperature of a silicon wafer. 11 This experimental system was mainly used for the radiation thermometry measurements described in Secs. II A and II B. show examples of emissivityinvariant radiation thermometry measurement results for silicon wafers with SiO 2 films and Si 3 N 4 films at a wavelength of λ = 1.55 μm, respectively.…”

Section: A Emissivity-invariant Radiation Thermometrymentioning

confidence: 99%

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A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

Iuchi

Toyoda

Seo³

2013

Review of Scientific Instruments

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We studied the spectral and directional emissivities of silicon wafers using an optical polarization technique. Based on simulation and experimental results, we developed two radiation thermometry methods for silicon wafers: one is based on the polarized emissivity-invariant condition and the other is based on the relationship between the ratio of the p- and s-polarized radiance and the polarized emissivity. These methods can be performed at temperatures above 600 °C and over a wide wavelength range (0.9-4.8 μm), irrespective of the dielectric film thickness and the substrate resistivity, which depends on the dopant concentration. The temperature measurements were estimated to have expanded uncertainties (k = 2) of less than 5 °C. With a view to practically applying these methods, we investigated a method to reduce the intense background radiance produced by high-intensity heating lamps. We found that the background radiance can be greatly reduced by using a radiometer that is sensitive to wavelengths of 4.5 or 4.8 μm and suitable geometrical arrangements of a quartz plate. This opens up the possibility of using the two proposed radiation thermometry methods in practical applications.

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Section: B Methods For Simultaneously Measuring Emissivity and Tempermentioning

confidence: 99%

Section: A Emissivity-invariant Radiation Thermometrymentioning

confidence: 99%

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

Iuchi

Toyoda

Seo³

2013

Review of Scientific Instruments

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“…The uncertainty (a), of the hybrid surface temperature sensor was analyzed in detail [16]. Therefore, only the results were described here.…”

Section: Hybrid Surface Temperature Sensormentioning

confidence: 99%

“…(16) and (17), representative values of e p (h 1 ) and e s (h 1 ) were taken as 0.85 and 0.45, respectively. u p and u s were calculated as 1.18 K and 1.39 K at T = 1000 K and k = 0.9 lm, respectively.…”

Section: Experimental Relation Realizing Measurement Principlementioning

confidence: 99%

Simultaneous measurement of emissivity and temperature of silicon wafers using a polarization technique

Iuchi

Gogami

2010

Measurement

Self Cite

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“…(2) Meanwhile, the temperature change of the thermocouple rainfall sensor caused by rain is not apparent. (3,4) The sensor is easily affected by changes in environmental temperature and easily corroded by rainwater. Image rainfall sensors based on image-processing technology are vulnerable to external physical interference, and their algorithms are complex and costly.…”

Section: Introductionmentioning

confidence: 99%

Proximity Capacitance Array Sensor Based on Data Aggregation Strategy for Rainfall Detection

2018

Sensors and Materials

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People need to measure rainfall accurately in many cases, and hence improving the accuracy and real-time performance of rainfall sensors is a current problem. A new type of rainfall sensor based on a proximity capacitance array is proposed. The sensor can be used to detect the rainfall coverage of an insulator surface accurately and efficiently. According to the different characteristics of dielectric constants of different materials, the water film thickness on the surface of the insulator is measured by using the principle of proximity capacitance, and a comprehensive evaluation index of sensor performance is proposed. The finite element method is utilized to compare the characteristics of capacitive sensors using three types of electrode to improve sensor penetrability and achieve high water film detection sensitivity. An electrode array is designed according to optimal results, and multielectrode measurement data are aggregated to determine the amount of rainfall. Moreover, an experimental sensor platform is constructed to verify the proposed rain sensor based on a proximity capacitance array. The designed rainfall sensor possesses good accuracy, and the measurement error is about ±2.3%. The proposed rainfall sensor allows for accurate real-time measurements of rainfall on insulator surfaces with a certain thickness.

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Uncertainty of a hybrid surface temperature sensor for silicon wafers and comparison with an embedded thermocouple

Cited by 10 publications

References 2 publications

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

A method of reducing background radiance for emissivity-compensated radiation thermometry of silicon wafers

Simultaneous measurement of emissivity and temperature of silicon wafers using a polarization technique

Proximity Capacitance Array Sensor Based on Data Aggregation Strategy for Rainfall Detection

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