Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor

Saito, Wataru; Lou, Zaiqi; Nishizawa, Shin Ichi

doi:10.1109/ted.2022.3200637

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…To reduce the burden on power semiconductor devices, voltage clamping components such as metal-oxide varistors (MOVs) [30]- [32], and parallel and/or series connected transient voltage suppression (TVS) diodes [33], [34], as well as snubber circuits [35] are widely discussed to improve cutoff capability and reliability. In the methods, immediately after the current cutoff, the clamping components consume the energy, instead of the power devices.…”

Section: Introductionmentioning

confidence: 99%

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Takamori,

Wada,

Saito

et al. 2024

IEEE Open J. Power Electron.

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This paper proposes a solid-state circuit breaker comprising silicon carbide (SiC) MOSFETs and a SiC diode, based on the principle of avalanche voltage clamping. The key challenge in realizing a solid-state circuit breaker lies in reducing conduction loss. A parallel connection of power semiconductor devices is the suitable configuration that can meet these requirements. However, in such a configuration, the current balance during cutoff operation may be affected by the variation in the breakdown voltage characteristics of the power semiconductor devices. To address this issue, the proposed circuit breaker employs clamping with a SiC merged pin-Schottky (MPS) diode, with high avalanche tolerance and robust characteristics under repetitive avalanche events. The effectiveness of the proposed solid-state circuit breaker is validated through experiments conducted in an unclamped inductive switching (UIS) test circuit using a 400-V, 50-A DC distribution system. Eventually, the demonstrations indicate that the SiC diode clamping method contributes to more compact implementations for solid-state circuit breakers.

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Section: Introductionmentioning

confidence: 99%

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Takamori,

Wada,

Saito

et al. 2024

IEEE Open J. Power Electron.

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“…Imposing excessive transient energy on varistors significantly impacts their lifetime [3]. To safely handle high fault current, it is common to utilize multiple varistors in parallel [4]- [6]. Nevertheless, varistors are not originally designed for parallel connections.…”

Section: Introductionmentioning

confidence: 99%

Machine Learning Enabled Cluster Grouping of Varistors in Parallel-Structured DC Circuit Breakers

Zhao,

Wang,

Kheirollahi

et al. 2023

IEEE Open J. Power Electron.

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Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker

Takamori,

Wada,

Saito

et al. 2023

Microelectronics Reliability

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Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor

Cited by 4 publications

References 21 publications

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Machine Learning Enabled Cluster Grouping of Varistors in Parallel-Structured DC Circuit Breakers

Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker

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